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Selective lateral ZnO nanowire growth by surface diffusion on nanometer scale–patterned alumina on silicon

Published online by Cambridge University Press:  11 May 2011

Bing Hu ,
Nitin Chopra ,
Pawan Tyagi  and
Bruce Hinds
Bing Hu
Affiliation:
Chemical and Materials Engineering, University of Kentucky, Lexington, Kentucky 40506
Nitin Chopra
Affiliation:
Chemical and Materials Engineering, University of Kentucky, Lexington, Kentucky 40506
Pawan Tyagi
Affiliation:
Chemical and Materials Engineering, University of Kentucky, Lexington, Kentucky 40506
Bruce Hinds*
Affiliation:
Chemical and Materials Engineering, University of Kentucky, Lexington, Kentucky 40506
*
b)Address all correspondence to this author. e-mail: bjhinds@engr.uky.edu
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Abstract

Lateral ZnO nanowires (NWs) were selectively grown from the edge of a SiO2/Si–Al2O3–SiO2/Si multilayer structure for potential integration into devices using Si processing technology. Microstructural studies demonstrate a two-step growth process in which the tip region, with a diameter of ~10 nm, rapidly grew from the Al2O3 surface and, later, a base growth with a diameter of ~22 nm overgrew the existing narrow ZnO NW, halting further tip growth. Kinetics studies showed that surface diffusion on the alumina seed surface determined ZnO NW growth rate.

Keywords

NanoscaleOxideKinetics
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 17: Focus Issue: Nanowires: Fundamentals and Applications , 14 September 2011 , pp. 2224 - 2231
Copyright
Copyright © Materials Research Society 2011

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Footnotes

a)

Present address: Metallurgical and Materials Engineering, Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487

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