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Self-propagating, high-temperature combustion synthesis of rhombohedral AlPt thin films

Published online by Cambridge University Press:  03 March 2011

D.P. Adams ,
M.A. Rodriguez ,
C.P. Tigges  and
P.G. Kotula
D.P. Adams*
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
M.A. Rodriguez
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
C.P. Tigges
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
P.G. Kotula
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
*
a) Address all correspondence to this author. e-mail: dpadams@sandia.gov
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Abstract

Sputter-deposited, Al/Pt multilayer thin films of various designs exhibited rapid, self-propagating, high-temperature reactions. With reactant layers maintained at ∼21 °C prior to ignition and films adhered to oxide-passivated silicon substrates, the propagation speeds varied from approximately 20 to 90 m/s depending on bilayer dimension and total film thickness. Contrary to current Al–Pt equilibrium phase diagrams, all multilayers reacted in air and in vacuum transformed into rhombohedral AlPt having a space group R-3(148). Rietveld refinement of AlPt powder (generated from thin film samples) yielded trigonal/hexagonal unit cell lattice parameters of a = 15.634(3) Å and c = 5.308(1) Å; the number of formula units = 39. Rhombohedral AlPt was stable to 550 °C with transformation to a cubic FeSi-type structure occurring above this temperature.

Keywords

X-ray diffraction (XRD)Combustion synthesis (SHS)Crystallographic structure
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 12 , December 2006 , pp. 3168 - 3179
Copyright
Copyright © Materials Research Society 2006

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