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Silicide formation in implanted channels and interfacial reactions of metal contacts under high current density

Published online by Cambridge University Press:  31 January 2011

K. N. Chen ,
H. H. Lin ,
S. L. Cheng ,
Y. C. Peng ,
G. H. Shen ,
L. J. Chen ,
C. R. Chen ,
J. S. Huang  and
K. N. Tu
K. N. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
H. H. Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
S. L. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Y. C. Peng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
G. H. Shen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
C. R. Chen
Affiliation:
United Microelectronics Corporation, Hsinchu, Taiwan, Republic of China
J. S. Huang
Affiliation:
Lucent Technologies, AT&T Bell Laboratories, Orlando, Florida
K. N. Tu
Affiliation:
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California
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Abstract

Silicide formation in implanted channels and interfacial reactions of Ni, Co, Ti, and Cu contacts under high current density have been investigated. Silicide lines, forming in the implanted channels, were observed in Ni and Cu/p+–Si samples but not in Ti and Co samples. The silicide line formation is correlated to the high diffusivity of metals in Si. For the Ni/p+–Si sambles, silicode line was found to initiate form the cathode contact. Network structures at the cathode were found in both Co and Ni samples. The depth of silicide formation was found to extend to the junction depth. The relationships between the silicide length and contact size, the applied current, and the method of the applied current are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 12 , December 1999 , pp. 4720 - 4726
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Huang, J.S., Liou, H.K., and Tu, K.N., Phys. Rev. Lett. 25, 2346 (1996).CrossRefGoogle Scholar
2.Huang, J.S., Tu, K.N., Bedell, S.W., Lanford, W.A., Cheng, S.L., Lai, J.B., and Chen, L.J., J. Appl. Phys. 82, 2370 (1997).CrossRefGoogle Scholar
3.Huang, J.S. and Tu, K.N., in Diffusion Mechanisms in Crystalline Materials, edited by Mishim, Y., Vogl, G., Cowern, N., Callow, C., and Farkas, D. (Mater. Res. Soc. Symp. Proc. 527, Warrendale, PA, 1998), p. 423.Google Scholar
4.Chen, W.J., Chen, F.R., and Chen, L.J., Appl. Phys. Lett. 60, 2201 (1992).CrossRefGoogle Scholar
5.Chen, L.J., Hung, L.S., Mayer, J.W., Baglin, J.E.E, Neri, J.M., and Hammer, D.A., Appl. Phys. Lett. 40, 595 (1981).CrossRefGoogle Scholar
6.Li, J.X., Yang, W.S., and Tan, T.Y., J. Appl. Phys. 71, 196 (1992).CrossRefGoogle Scholar
7.Nicolet, M.A. and Lau, S.S., in VLSI Electronics, Microstructures, and Science, edited by Einspruch, N.G. and Larrabee, G.B. (Academic Press, New York, 1983), Vol. 6, p. 330.Google Scholar
8.Yasuoka, A. and Kuroi, T., Jpn. J. Appl. Phys. 36, 617 (1997).CrossRefGoogle Scholar
9.Kuroi, T. and Kusunoki, S., Digest of Technical Papers, 1994 IEEE Symposium on VLSI Technology, Honolulu, HI (IEEE, Piscataway, NJ, 1994), p. 107.CrossRefGoogle Scholar
10.Chen, L.J., Doland, C.M., Wu, I.W., Chiang, A., Chu, J.J., Lu, S.W., and Nieh, C.W., J. Electron. Mater. 17, 75 (1988).CrossRefGoogle Scholar
11.Wohlbier, R.H., Diffusion Data (Diffusion Information Center, Cleveland, OH, 1967), Vol. 1, No. 3, p. 32.Google Scholar
12.Wohlbier, R.H., Diffusion Data (Diffusion Information Center, Cleveland, OH, 1968), Vol. 2, No. 3/4, pp. 255, 292, 308.Google Scholar
13.Wohlbier, R.H., Diffusion Data (Diffusion Information Center, Cleveland, OH, 1970), Vol. 4, No. 1, p. 15.Google Scholar
14.Wohlbier, R.H., Diffusion Data (Diffusion Information Center, Cleveland, OH, 1970), Vol. 4, No. 2, p. 189.Google Scholar
15.Wohlbier, R.H., Diffusion and Defect Data (Diffusion Information Center, Cleveland, OH, 1978), Vol. 17, p. 186.Google Scholar
16.Spit, F.H.M, Gupta, D., and Tu, K.N., Phys. Rev. B 39, 1255 (1989).CrossRefGoogle Scholar
17.Mayer, J.W. and Lau, S.S., Electronic Material Science: For Integrated Circuits in Si and GaAs (MacMillan, New York, 1990), p. 206.Google Scholar
18.Hall, R.N. and Racette, J.H., J. Appl. Phys. 35, 379 (1964).CrossRefGoogle Scholar
19.Blackburn, D.A., Hummel, R.E., and Huntington, H.B., Electro-and Thermo-Transport in Metals and Alloys, eds. (AIME, New York, 1977), p. 20.Google Scholar