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Simulation studies of Sn-based perovskites with Cu back-contact for non-toxic and non-corrosive devices

Published online by Cambridge University Press:  24 June 2019

Saquib Ahmed ,
Jalen Harris ,
Jon Shaffer ,
Mohan Devgun ,
Shaestagir Chowdhury ,
Aboubakr Abdullah  and
Sankha Banerjee
Saquib Ahmed*
Affiliation:
Department of Mechanical Engineering Technology, SUNY – Buffalo State, Buffalo, New York 14222, USA
Jalen Harris
Affiliation:
Department of Mechanical Engineering, California State University – Fresno, Fresno, California 93740, USA
Jon Shaffer
Affiliation:
Department of Mechanical Engineering Technology, SUNY – Buffalo State, Buffalo, New York 14222, USA
Mohan Devgun
Affiliation:
Department of Mechanical Engineering Technology, SUNY – Buffalo State, Buffalo, New York 14222, USA
Shaestagir Chowdhury
Affiliation:
Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, USA
Aboubakr Abdullah
Affiliation:
Center for Advanced Materials, Qatar University, Doha, Qatar
Sankha Banerjee
Affiliation:
Department of Mechanical Engineering, California State University – Fresno, Fresno, California 93740, USA
*
a)Address all correspondence to this author. e-mail: ahmedsm@buffalostate.edu
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Abstract

Using general-purpose photovoltaic device model, we have simulated the operation and functionality of a working Sn perovskite/Cu2O hole transport layer (HTL)/Cu back-contact device versus a standard Pb perovskite/Spiro HTL/Ag back-contact device. The results are extremely promising in that they showcase comparable cell efficiencies, with the Sn perovskite/Cu2O HTL/Cu back-contact device showing a highest 22.9% efficiency [Jsc of 353.4 A/m2, Voc of 0.84 V, fill factor (FF) of 0.77] at 427 nm active layer thickness compared with 24.6% of the standard Pb perovskite/Spiro HTL/Ag back-contact device (Jsc of 356.8 A/m2, Voc of 0.82 V, FF of 0.84) at the same active layer thickness. Jsc, Voc, and FF kinetics reveal that the Sn perovskite/Cu2O HTL/Cu back-contact device can perform better by reducing the recombination centers both within each layer matrix and in the interfacial contacts.

Keywords

photovoltaicsimulationPb
Type
Invited Paper
Information
Journal of Materials Research , Volume 34 , Issue 16 , 28 August 2019 , pp. 2789 - 2795
Copyright
Copyright © Materials Research Society 2019 

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