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Single process CVD growth of hBN/Graphene heterostructures on copper thin films

Published online by Cambridge University Press:  27 November 2018

Gene Siegel Open the ORCID record for Gene Siegel [Opens in a new window] ,
Gordon Grzybowski ,
Timothy Prusnick  and
Michael Snure
Gene Siegel*
Affiliation:
KBRwyle, Beavercreek, Ohio 45433, USA; and Sensors Directorate, Air Force Research Laboratories, Wright Patterson AFB, Ohio 45433, USA
Gordon Grzybowski
Affiliation:
KBRwyle, Beavercreek, Ohio 45433, USA; and Sensors Directorate, Air Force Research Laboratories, Wright Patterson AFB, Ohio 45433, USA
Timothy Prusnick
Affiliation:
KBRwyle, Beavercreek, Ohio 45433, USA; and Sensors Directorate, Air Force Research Laboratories, Wright Patterson AFB, Ohio 45433, USA
Michael Snure
Affiliation:
Sensors Directorate, Air Force Research Laboratories, Wright Patterson AFB, Ohio 45433, USA
*
a)Address all correspondence to this author. e-mail: gene.siegel.ctr@us.af.mil
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Abstract

In this study, we have successfully grown hBN/graphene heterostructures on copper thin films using chemical vapor deposition in a single process. The first and most surprising result is that graphene grows underneath hBN and adjacent to the Cu film even though it is deposited second. This was determined from cross-sectional TEM analysis and XPS depth profiling, which chemically identified the relative positions of hBN and graphene. The effect of various growth conditions on graphene/hBN heterostructures was also studied. It was found that a pressure of 200 torr and a hydrogen flow rate of 200 sccm (∼1 H2/N2) yielded the highest quality of graphene, with full surface coverage occurring after a growth time of 120 min. The resulting graphene films were found to be approximately 6–8 layers thick. The grain size of the nanocrystalline graphene was found to be 15–50 nm varying based on growth conditions.

Keywords

bonefibernanostructure
Type
Article
Information
Journal of Materials Research , Volume 33 , Issue 24 , 28 December 2018 , pp. 4233 - 4240
Copyright
Copyright © Materials Research Society 2018 

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