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Solution chemistry effects on cracking and damage evolution during chemical-mechanical planarization

Published online by Cambridge University Press:  31 January 2011

Markus D. Ong
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Patrick Leduc
Affiliation:
Commissariat à l'Énergie Atomique - LETI (CEA-LETI), Minatec, 38054 Grenoble Cedex 9, France
Daniel W. McKenzie
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Thierry Farjot
Affiliation:
Commissariat à l'Énergie Atomique - LETI (CEA-LETI), Minatec, 38054 Grenoble Cedex 9, France
Gerard Passemard
Affiliation:
STMicroelectronics, 38926 Crolles Cedex, France
Sylvain Maitrejean
Affiliation:
Commissariat à l'Énergie Atomique - LETI (CEA-LETI), Minatec, 38054 Grenoble Cedex 9, France
Reinhold H. Dauskardt*
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
*
a)Address all correspondence to this author. e-mail: dauskardt@stanford.edu
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Abstract

We describe progress in understanding the effect of simulated chemical-mechanical planarization (CMP) slurry chemistry on the evolution of defects and formation of damage that occurs during CMP processing. Specifically, we demonstrate the significant effect of aqueous solution chemistry on accelerating crack growth in porous methylsilsesquioxane (MSSQ) films. In addition, we show that the same aqueous solutions can diffuse rapidly into the highly hydrophobic nanoporous MSSQ films containing interconnected porosity. Such diffusion has deleterious effects on both dielectric properties and the acceleration of defect growth rates. Crack propagation rates were measured in several CMP solutions, and the resulting crack growth behavior was used to qualitatively predict the extent of damage during CMP. These predictions are compared with damage formed during actual CMP processes in identical chemistries. We discuss the effects of both the high and low crack growth rate regimes, including the presence of a crack growth threshold, on the predicted CMP damage. Finally, implications for improved CMP processing were considered.

Type
Articles
Copyright
Copyright © Materials Research Society 2010

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References

REFERENCES

1.Yoon, B.U., Kondo, S., Tokitoh, S., Namiki, A., Misawa, K., Inukai, K., Ohashi, N., Kobayashi, N.Characterization of patterned low-k film delamination during CMP for the 32-nm node Cu/ultra low-k (k = 1.6–1.8) integrationIEEE International Interconnect Technology Conference (IEEE, San Francisco, CA 2004)Google Scholar
2.Leduc, P., Savoye, M., Maitrejean, S., Scevola, D., Jousseaume, V., Passemard, G.Understanding CMP-induced delamination in ultra low-k/Cu integrationIEEE International Interconnect Technology Conference (IEEE, Burlingame, CA 2005)Google Scholar
3.Guyer, E.P., Dauskardt, R.H.Effect of solution pH on the accelerated cracking of nanoporous thin-film glasses. J. Mater. Res. 20, (3)680 (2005)CrossRefGoogle Scholar
4.Guyer, E.P., Dauskardt, R.H.Fracture of nanoporous thin-film glasses. Nat. Mater. 3, (1)53 (2004)CrossRefGoogle ScholarPubMed
5.Guyer, E.P., Patz, M., Dauskardt, R.H.Fracture of nanoporous methyl silsesquioxane thin-film glasses. J. Mater. Res. 21, (4)882 (2006)CrossRefGoogle Scholar
6.Tsui, T.Y., McKerrow, A.J., Vlassak, J.J.The effect of water diffusion on the adhesion of organosilicate glass film stacks. J. Mech. Phys. Solids 54, (5)887 (2006)CrossRefGoogle Scholar
7.Hutchinson, J.W., Suo, Z.Mixed-mode cracking in layered materials. Adv. Appl. Mech. 29, 63 (1992)CrossRefGoogle Scholar
8.Thouless, M.D.Fracture mechanics for thin-film adhesion. IBM J. Res. Dev. 38, (4)367 (1994)CrossRefGoogle Scholar
9.Roesler, F.C.Brittle fractures near equilibrium. Proc. Phys. Soc. London, Sect. B 69, (10)981 (1956)CrossRefGoogle Scholar
10.Lawn, B., Wilshaw, R.Indentation fracture: Principles and applications. J. Mater. Sci. 10, (6)1049 (1975)CrossRefGoogle Scholar
11.Wang, D., Lee, J., Holland, K., Bibby, T., Beaudoin, S., Cale, T.Von Mises stress in chemical-mechanical polishing processes. J. Electrochem. Soc. 144, (3)1121 (1997)CrossRefGoogle Scholar
12.Srinivasa-Murthy, C., Wang, D., Beaudoin, S.P., Bibby, T., Holland, K., Cale, T.S.Stress distribution in chemical mechanical polishing. Thin Solid Films 308–309, 533 (1997)CrossRefGoogle Scholar
13.Guyer, E.P., Gantz, J., Dauskardt, R.H.Aqueous solution diffusion in hydrophobic nanoporous thin-film glasses. J. Mater. Res. 22, (3)710 (2007)CrossRefGoogle Scholar
14.Jensen, H.M., Hutchinson, J.W., Kim, K.S.Decohesion of a cut prestressed film on a substrate. Int. J. Solids Struct. 26, (9–10)1099 (1990)CrossRefGoogle Scholar
15.Kim, T.S., Konno, T., Dauskardt, R.H.Surfactant-controlled damage evolution during chemical mechanical planarization of nanoporous films. Acta Mater. 57, (16)4687 (2009)CrossRefGoogle Scholar
16.Leduc, P., Savoye, M., Scevola, D., Rivoire, M.In situ friction characterization during copper CMPProceedings of the 21st VMIC (VMIC, Waikoloa, HI 2004)Google Scholar