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SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures

Published online by Cambridge University Press:  08 January 2013

Bin Zou ,
Peter K. Petrov  and
Neil McN. Alford
Bin Zou*
Affiliation:
Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom
Peter K. Petrov
Affiliation:
Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom
Neil McN. Alford
Affiliation:
Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom
*
a)Address all correspondence to this author. e-mail: b.zou@imperial.ac.uk
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Abstract

A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO3 films had lattice parameters matching those of bulk SrRuO3 material and exhibited room temperature resistivity of 320 μΩ·cm. The resistivity of SrRuO3/MgO films decreased with increasing oxygen partial pressure.

Keywords

laser ablationmetallic conductorepitaxy
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 5 , 14 March 2013 , pp. 702 - 707
Copyright
Copyright © Materials Research Society 2013

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References

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