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Strain measurement in heteroepitaxial layers—Silicon on sapphire

Published online by Cambridge University Press:  31 January 2011

Thad Vreeland Jr.
Thad Vreeland Jr.
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125
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Abstract

An x-ray diffraction technique is presented for the determination of the strain tensor in an epitaxial layer grown on a crystallographically distinct substrate. The technique utilizes different diffracting planes in the layer and in a reference crystal fixed to the layer, and is illustrated by application to an ∼4000 Å (001) silicon layer grown on a (01$\overline 1$2 sapphire wafer. The principal strains were measured, and the measured strain normal to the layer was found to agree with the normal strain calculated from the measured in-plane strains within the experimental uncertainty of strain measurement. The principal stresses in the plane of the silicon film, calculated from the measured strains were −0.92 ± 0.16 GPa in the [100] direction and −0.98 ± 0.17 GPa in the [010] direction.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 5 , October 1986 , pp. 712 - 716
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1Dumin, D. J., J. Appl. Phys. 36, 2700 (1965).Google Scholar
2Hughes, A. J., J. Appl. Phys. 46, 2849 (1975).CrossRefGoogle Scholar
3Bonseand, U.Hartmann, I., Z. Kristallogr. 156, 265 (1981).Google Scholar
4Bonse, U. and Z. Physik 153, 278 (1958).CrossRefGoogle Scholar
5Speriosu, V. S. and Vreeland, T. Jr., J. Appl. Phys. 56, 1591 (1984).CrossRefGoogle Scholar
6Wilkens, M., Phys. Stat. Solidi A 2, 359 (1970).Google Scholar
7Warren, B. E., X-ray Diffraction (Addison-Wesley, Reading, MA, 1969).Google Scholar
8Abrahams, M. S. and Buiocchi, C. J., Appl. Phys. Lett. 27, 325 (1975).CrossRefGoogle Scholar
9Speriosu, V. S., J. Appl. Phys. 52, 6094 (1981).CrossRefGoogle Scholar