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Study of Microstructure in SrTiO3/Si by High-resolution Transmission Electron Microscopy

Published online by Cambridge University Press:  31 January 2011

G. Y. Yang
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, Maryland 20742
J. M. Finder
Affiliation:
Physical Science Research Laboratories, Motorola Inc., Tempe, Arizona 85284
J. Wang
Affiliation:
Physical Science Research Laboratories, Motorola Inc., Tempe, Arizona 85284
Z. L. Wang
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332–0245
Z. Yu
Affiliation:
Physical Science Research Laboratories, Motorola Inc., Tempe, Arizona 85284
J. Ramdani
Affiliation:
Physical Science Research Laboratories, Motorola Inc., Tempe, Arizona 85284
R. Droopad
Affiliation:
Physical Science Research Laboratories, Motorola Inc., Tempe, Arizona 85284
K. W. Eisenbeiser
Affiliation:
Physical Science Research Laboratories, Motorola Inc., Tempe, Arizona 85284
R. Ramesh
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, Maryland 20742
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Abstract

Microstructure in the SrTiO3/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO3 grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110]Si. The lattice misfit between the SrTiO3 thin films and the Si substrate is accommodated by the presence of interfacial dislocations at the Si substrate side. The interface most likely consists of Si bonded to O in SrTiO3. The alternative presentation of Sr and Si atoms along the interface leads to the formation of 2× and 3× Sr configurations. Structural defects in the SrTiO3 thin film mainly consist of tilted domains and dislocations.

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Articles
Copyright
Copyright © Materials Research Society 2002

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