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Study of the growth mechanism of highly in-plane aligned α-axis YBa2Cu3O7−x thin films on LaSrGaO4 substrate by high resolution electron microscopy

Published online by Cambridge University Press:  31 January 2011

J. G. Wen
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13, 1-chome, koto-ku, Tokyo 135, Japan
S. Mahajan
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13, 1-chome, koto-ku, Tokyo 135, Japan
H. Ohtsuka
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13, 1-chome, koto-ku, Tokyo 135, Japan
T. Morishita
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13, 1-chome, koto-ku, Tokyo 135, Japan
N. Koshizuka
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13, 1-chome, koto-ku, Tokyo 135, Japan
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Abstract

Highly in-plane aligned α-axis YBa2Cu3O7−x thin films deposited on (100) LaSrGaO4 substrates by a self-template method were studied by high-resolution electron microscopy along three orthogonal 〈100〉 axes of the substrate. Plan-view images confirm that the majority of the film preferentially aligns across the entire substrate except for very few misaligned domains with average size 10 nm2. Cross-sectional images along the [100] orientation of YBa2Cu3O7−x reveal that in-plane aligned α-axis YBa2Cu3O7−x is grown on a template layer dominated by c-axis oriented film. This strongly suggests that the in-plane alignment of α-axis YBa2Cu3O7−x thin films on (100) LaSrGaO4 substrates is governed by the different stresses along the b and c axes of the substrate. Cross-sectional images along [001] of the YBa2Cu3O7x thin film reveal that the 90° domains easily nucleate in the region between α-axis YBa2Cu3O7x and the YBa4Cu3Ox phase. Cracks along the (001) plane of YBa2Cu3O7−x are found to be due to the large mismatch between the c parameters of the thin film and substrate.

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Articles
Copyright
Copyright © Materials Research Society 1996

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References

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