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Surface and optical property modifications of self-assembled CdTe/ZnTe quantum dots caused by thermal treatment

Published online by Cambridge University Press:  31 January 2011

H.S. Lee ,
H.L. Park  and
T.W. Kim
H.S. Lee
Affiliation:
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
H.L. Park
Affiliation:
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
T.W. Kim*
Affiliation:
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seongdong-gu, Seoul 133-791, Korea
*
a)Address all correspondence to this author. e-mail: twk@hanyang.ac.kr
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Abstract

Atomic force microscopy images showed that the size of the CdTe quantum dots (QDs) slightly increased with increasing annealing temperature up to 350 °C. Photoluminescence spectra showed that the excitonic peak corresponding to the interband transition from the ground electronic subband to the ground heavy-hole band (E1–HH1) in the CdTe/ZnTe QDs annealed at 350 °C was shifted to lower energy compared with that in as-grown CdTe/ZnTe QDs. The full width at half-maximum of the E1–HH1 transition peak in the CdTe/ZnTe QDs annealed at 350 °C decreased resulting from the improvement of the crystallinity for the annealed CdTe QDs.

Keywords

Optical propertiesMolecular beam epitaxy (MBE)Annealing
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 5 , May 2008 , pp. 1315 - 1319
Copyright
Copyright © Materials Research Society 2008

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References

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