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Surface oxidation of molten Sn–0.07 wt% P in air at 280 °C

Published online by Cambridge University Press:  31 January 2011

Ai-Ping Xian  and
Guo-Liang Gong
Ai-Ping Xian*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, People’s Republic of China
Guo-Liang Gong
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: ap.xian@imr.ac.cn
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Abstract

In this article, we describe oxidation of molten Sn–0.07 wt% P alloy exposed in air at 280 °C. Although oxidation can be effectively reduced by the addition of trace phosphorus, the oxide film has a poor protection for the molten alloy with a high P concentration. The oxide film was analyzed by x-ray photoelectron spectroscopy. Comparing the results with the low P sample, there was a high phosphorous content in the film and a new Sn–P compound on the surface of the high P sample. It is assumed that the poor protection against oxidation of the film could be due to volatility of phosphorus in the Sn–P alloy at the temperature.

Keywords

OxidationSnLiquid

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Type
Articles
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Journal of Materials Research , Volume 23 , Issue 6 , June 2008 , pp. 1532 - 1536
Copyright
Copyright © Materials Research Society 2008

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