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Synchrotron radiography and x-ray topography studies of hexagonal habitus SiC bulk crystals

Published online by Cambridge University Press:  31 January 2011

T. S. Argunova ,
M. Yu. Gutkin ,
Jung Ho Je ,
H. S. Kang ,
Y. Hwu ,
W-L. Tsai  and
G. Margaritondo
T. S. Argunova
Affiliation:
Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia, and Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea
M. Yu. Gutkin
Affiliation:
Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, Russia
Jung Ho Je
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea
H. S. Kang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea
Y. Hwu
Affiliation:
Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of China
W-L. Tsai
Affiliation:
Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of China
G. Margaritondo
Affiliation:
Institute de physique appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Abstract

Phase-sensitive synchrotron radiation (SR) radiography was combined with x-ray diffraction topography to study structural defects of SiC crystals. The particular bulk SiC crystals examined had a low micropipe density and a hexagonal habitus composed of prismatic, pyramidal, and basal faces well developed. X-ray diffraction topography images of the sliced (0001) wafers, which were formed due to the complex lattice distortions associated with defective boundaries, demonstrated the existence of two-dimensional defective boundaries in the radial direction, normal to the (0001) planes. In particular, those parallel to the 〈1120〉 directions extended rather far from the seed. On the other hand, by phase-sensitive SR radiography the effect of micropipe collection was detected. Micropipes grouped mostly in the vicinities of the defective boundaries but rarely appeared between groups. Some general remarks about possible reasons for the development of such peculiar defect structures were made.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 10 , October 2002 , pp. 2705 - 2711
Copyright
Copyright © Materials Research Society 2002

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References

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