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Synthesis of BaAl2Si2O8 from solid Ba–Al–Al2O3–SiO2 precursors: Part III. The structure of BaAl2Si2O8 formed by annealing at ≤650 °C and at 1650 °C

Published online by Cambridge University Press:  31 January 2011

Xiao-Dong Zhang ,
Kenneth H. Sandhage  and
Hamish L. Fraser
Xiao-Dong Zhang
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210
Kenneth H. Sandhage
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210
Hamish L. Fraser
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210
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Abstract

Analytical TEM and HREM have been used to examine the structure of BaAl2Si2O8 crystals produced within oxidized Ba–Al–Al2O3–SiO2 precursors upon annealing: (i) at ≤650 °C and (ii) up to 1650 °C. A BaAl2Si2O8 polymorph with a c-axis parameter of 15.6 Å was detected after annealing at ≤650 °C. Stacking faults and antiphase boundaries were detected within this polymorph after the 650 °C treatment. After a 15 h heat treatment at 1650 °C, convergent beam diffraction patterns and HREM confirmed that the predominant phase was β–hexacelsian. Although antiphase boundaries were absent in the β–hexacelsian crystals, dislocations and stacking faults were detected after the 1650 °C anneal. The generation of defects in BaAl2Si2O8 crystals within specimens annealed at ≤650 °C and at 1650 °C is discussed in light of prior structural analyses.

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Articles
Information
Journal of Materials Research , Volume 13 , Issue 11 , November 1998 , pp. 3122 - 3134
Copyright
Copyright © Materials Research Society 1998

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