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Synthesis of crack-free thick diamond wafer by step-down control of deposition temperature

Published online by Cambridge University Press:  31 January 2011

Jae-Kap Lee ,
Young-Joon Park ,
Kwang Yong Eun ,
Young-Joon Baik  and
Jong-Wan Park
Jae-Kap Lee
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul, 130-650, Korea
Young-Joon Park
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul, 130-650, Korea
Kwang Yong Eun
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul, 130-650, Korea
Young-Joon Baik
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul, 130-650, Korea
Jong-Wan Park
Affiliation:
Department of Metallurgical Engineering, Hanyang University, Seoul, 133-791, Korea
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Due to growth tensile stress, which evolves in diamond films during deposition, thick diamond films are easily cracked. In this study we successfully prevented growth cracks by introducing thermal compressive stress with step-down control of deposition temperatures during growth. Three deposition temperature drops of 10 °C each during deposition enabled us to successfully synthesize crack-free four-inch diamond wafers several hundred micrometers in thickness. This method is very simple and may be applicable to coating of films of various materials different from those of substrates.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 29 - 32
Copyright
Copyright © Materials Research Society 2000

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References

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