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Synthesis of Si2N2O nanowires in porous Si2N2O–Si3N4 substrate using Si powder

Published online by Cambridge University Press:  03 March 2011

Byong-Taek Lee ,
Rajat Kanti Paul ,
Kap-Ho Lee  and
Hai-Doo Kim
Byong-Taek Lee*
Affiliation:
School of Advanced Materials Engineering, Kongju National University, Kongju City, Chungnam 314-701, South Korea
Rajat Kanti Paul
Affiliation:
School of Advanced Materials Engineering, Kongju National University, Kongju City, Chungnam 314-701, South Korea
Kap-Ho Lee
Affiliation:
School of Advanced Materials Engineering, Chungnam National University, Yuseong-gu, Daejon 305-764, South Korea
Hai-Doo Kim
Affiliation:
Ceramic Materials Group, Korea Institute of Machinery and Materials, Changwon, Kyungnam 641-010, South Korea
*
a) Address all correspondence to this author. e-mail: lbt@kongju.ac.kr
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Abstract

The formation of synthesized Si2N2O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the Si2N2O nanowires having a high aspect ratio of about 50–80 nm was found in the porous Si2N2O–Si3N4 substrate to which 6 wt% C was added. The synthesized Si2N2O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of Si2N2O nanowires showed a strong, stable green emission at 540 nm.

Keywords

CeramicCrystal growthNanostructure
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 3 , March 2007 , pp. 615 - 620
Copyright
Copyright © Materials Research Society 2007

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