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Synthesis of SiC microtube with villus-like morphology and SiC fiber

Published online by Cambridge University Press:  03 March 2011

Jae-Won Kim
Affiliation:
Department of Materials Science and Engineering, Changwon National University, Changwon, Kyungnam 641-773, Republic of Korea
Seoung-Soo Lee
Affiliation:
Department of Materials Science and Engineering, Changwon National University, Changwon, Kyungnam 641-773, Republic of Korea
Yeon-Gil Jung*
Affiliation:
Department of Materials Science and Engineering, Changwon National University, Changwon, Kyungnam 641-773, Republic of Korea
Baig-Gyu Choi
Affiliation:
High Temperature Materials Group, Korea Institute of Machinery and Materials, Changwon, Kyungnam 641-010, Republic of Korea
Chang-Yong Jo
Affiliation:
High Temperature Materials Group, Korea Institute of Machinery and Materials, Changwon, Kyungnam 641-010, Republic of Korea
Ungyu Paik
Affiliation:
Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Republic of Korea
*
a) Address all correspondence to this author. e-mail: jungyg@changwon.ac.kr
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Abstract

Silicon carbide (SiC) microtubes were synthesized and characterized via a vapor–solid (VS) reaction of carbon fiber (Csolid) and SiO(gas). The synthesis mechanisms were investigated. The precursor led complete conversion of [SiO(gas) + C(solid)] into [SiC(solid) + CO(gas)] through overall reaction under inert gas flow at and above 1350 °C. Carbon fibers with small surface area (0.7–2.0 m2 g−1) were gradually converted to SiC microtubes with large specific surface area (45–63 m2 g−1). Inner surface of SiC microtubes indicated a villus-like morphology, which consisted of submicron-sized SiC villi. The outer surface of the SiC microtubes was smooth. Inner surface morphology of SiC microtubes was dependent upon synthesizing temperature. Thickness of villus-like layer in SiC microtubes increased with increasing synthesizing temperature, showing 0.25 and 0.5 at 1350 and 1400 °C, respectively. Both VS and gas–liquid–solid (VLS) growth mechanisms were investigated in synthesis of SiC fiber as a reaction byproduct, and the reaction was governed by both growth mechanisms.

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Articles
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1.Russel-Floyd, R.S., Harris, B., Cooke, R.G., Laurie, J., Hammett, F.W., Jones, R.W. and Wang, T.: Application of sol-gel processing techniques for the manufacture of fiber-reinforced ceramics. J. Am. Ceram. Soc. 76, 2635 (1993).CrossRefGoogle Scholar
2.Mackenzie, J.D.: Crystallization of gel-derived glasses. J. Non-Cryst. Solids 100, 162 (1988).CrossRefGoogle Scholar
3.Vix-Guterl, C. and Ehrburger, P.: Effect of the properties of a carbon substrate on its reaction with silica for silicon carbide formation. Carbon 35, 1587 (1997).CrossRefGoogle Scholar
4.Vix-Guterl, C., McEnaney, B. and Ehrburger, P.: SiC material produced by carbothermal reduction of a freeze gel silica-carbon artefact. J. Eur. Ceram. Soc. 19, 427 (1999).CrossRefGoogle Scholar
5.Lednor, P.W.: Synthesis, stability, and catalytic properties of high surface area silicon oxynitride and silicon carbide. Catal. Today 15, 243 (1992).CrossRefGoogle Scholar
6.Vannice, M.A., Chao, Y.L. and Friedman, R.M.: The preparation and use of high surface area silicon carbide catalyst supports. Appl. Catal. 20, 91 (1986).CrossRefGoogle Scholar
7.Kizling, M. Boutonnet, Stenius, P., Andersson, S. and Frestad, A.: Characterization and catalytic activity of silicon carbide powder as catalyst support in exhaust catalysts. Appl Catal B: Environ. 1, 149 (1992).CrossRefGoogle Scholar
8.Moene, R., Boon, H.T., Schooman, J., Makkee, M. and Moulijn, J.A.: Coating of activated carbon with silicon carbide by chemical vapour deposition. Carbon 34, 567 (1996).CrossRefGoogle Scholar
9.Ledoux, M.J., Guille, J., Hantzer, S., and Dubots, D.: Process for the production of silicon carbide with a large specific surface area and use for high-temperature catalytic reactions. U.S. Patent No. 4914070 (Pechiney Electrometallurgie, 1990).Google Scholar
10.Ledoux, M.J., Hantzer, S., Pham-Huu, C., Guille, J.L. and Desaneaux, M.P.: New synthesis and uses of high specific surface area SiC as a catalytic support that is chemically inert and has high thermal resistance. J. Catal. 114, 176 (1988).CrossRefGoogle Scholar
11.Keller, N., Pham-Huu, C., Roy, S., Ledoux, M.J., Estournès, C. and Guille, J.L.: Influence of the preparation conditions on the synthesis of high surface area SiC for use as a heterogeneous catalyst support. J. Mater. Sci. 34, 3189 (1999).CrossRefGoogle Scholar
12.Keller, N., Pham-Huu, C., Ledoux, M.J., Estournes, C. and Ehert, G.: Preparation and characterization of SiC microtubes. Appl. Catal. A 187, 255 (1999).CrossRefGoogle Scholar
13.Kim, J.W., Lee, S.S., Park, D.H., Jung, Y.G., Lee, J.H. and Jo, C.Y.: Effect of inert gas flow nature on the SiC microtube synthesis. Key Eng. Mater. (2004, in press).Google Scholar
14.Vix-Guterl, C., Alix, I., Gibot, P. and Ehrburger, P.: Formation of tubular silicon carbide from a carbon-silica material by using a reactive replica technique: Infra-red characterisation. Appl. Surf. Sci. 210, 329 (2003).CrossRefGoogle Scholar
15.Moene, R., Makkee, M. and Moulijin, J.A.: High surface area silicon carbide as catalyst support characterization and stability. Appl. Catal. A 167, 321 (1998).CrossRefGoogle Scholar
16.Tang, Y.H., Zheng, Y.F., Lee, C.S., Wang, N., Lee, S.T. and Sham, T.K.: Carbon monoxide-assisted growth of carbon nanotubes. Appl. Phys. Lett. 342, 259 (2001).Google Scholar
17.Hurst, N.W., Gentry, S.J., Jones, A. and McNicol, B.D.: Temperature programmed reduction. Catal. Rev. Sci. Eng. 24, 233 (1982).CrossRefGoogle Scholar
18.Falconer, J.L. and Schwartz, K.A.: Temperature-programmed desorption and reaction: Applications to supported catalysts. Catal. Rev. Sci. Eng. 25, 141 (1983).CrossRefGoogle Scholar
19.Robertson, S.D.: Carbon formation from methane pyrolysis over some transition metal surfaces–I. Nature and properties of the carbons formed. Carbon 8, 365 (1970).CrossRefGoogle Scholar
20.Wang, L., Wada, H. and Allard, L.F.: Synthesis and characterization of SiC whiskers. J. Mater. Res. 7, 148 (1992).CrossRefGoogle Scholar
21.Seo, W-S. and Koumoto, K.: Stacking faults in β-SiC formed during carbothermal reduction of SiO2. J. Am. Ceram. Soc. 79, 1777 (1996).CrossRefGoogle Scholar
22.Milevski, J.V., Gag, F.D., Petrovic, J.J. and Skaggs, S.R.: Growth of beta-silicon carbide whiskers by the VLS process. J. Mater. Sci. 20, 1160 (1985).CrossRefGoogle Scholar
23.Geng, L. and Zhang, J.: A study of the crystal structure of a commercial β–SiC whisker by high-resolution TEM. Mater. Cem. Phy. 84, 243 (2004).CrossRefGoogle Scholar
24.Wang, L., Wada, H. and Allard, L.F.: Synthesis and characterization of SiC whiskers. J. Mater. Res. 7, 148 (1992).CrossRefGoogle Scholar
25.Milevski, J.V., Gag, F.D., Petrovic, J.J. and Skaggs, S.R.: Growth of beta-silicon carbide whiskers by the VLS process. J. Mater. Sci. 20, 1160 (1985).CrossRefGoogle Scholar
26.Wang, H., Berta, Y. and Fischman, G.S.: Microstructure of silicon carbide whiskers synthesized by carbothermal reduction of silicon nitride. J. Am. Ceram. Soc. 75, 1080 (1992).CrossRefGoogle Scholar
27.Jong, R.D. and McCauley, R.A.: Growth of twinned β-silicon carbide whiskers by the vapor-liquid-solid process. J. Am. Ceram. Soc. 70 C-338 (1987).Google Scholar
28.Choi, H.J. and Lee, J.G.: Continuous synthesis of silicon carbide whiskers. J. Mater. Sci. 30, 1982 (1995).CrossRefGoogle Scholar
29.Seo, W-S. and Koumoto, K.: Effects of boron, carbon, and iron content on the stacking fault formation during synthesis of β-SiC particles in the system SiO2-C-H2. J. Am. Ceram. Soc. 81, 1255 (1998).CrossRefGoogle Scholar
30.Choi, H-J. and Lee, J-G.: Stacking faults in silicon carbide whiskers. Ceram. Int. 26, 7 (2000).CrossRefGoogle Scholar