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Synthetic diamond crystal strength enhancement through annealing at 50 kbar and 1500 °C

Published online by Cambridge University Press:  03 March 2011

Steven W. Webb  and
W.E. Jackson
Steven W. Webb
Affiliation:
GE Superabrasives, 6325 Huntley Road, Worthington. Ohio 43085
W.E. Jackson
Affiliation:
GE Superabrasives, 6325 Huntley Road, Worthington. Ohio 43085
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Abstract

High-pressure, high temperature (HPHT) annealing of synthetic type I diamond crystals at 1200–1700 °C and 50–60 kbar was found to induce aggregate-nitrogen dissociation and metal coalescence as well as heal diamond lattice dislocations. For crystals with low levels of metal inclusions, HPHT annealing was observed to increase the average compressive fracture strength of the crystals by apparently strengthening the strongest crystals of the population. Crystals with high metal-content, or otherwise of low quality, are weakened by anncaling. Strengthening is believed to occur by locally stabilizing the diamond lattice by healing lattice dislocations as well as dispersing nitrogen within the lattice. A general model is presented that ties together these results with those of other researchers.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 7 , July 1995 , pp. 1700 - 1709
Copyright
Copyright © Materials Research Society 1995

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