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Systematic trends of YBa2Cu3O7−δ thin films post annealed in low oxygen partial pressures

Published online by Cambridge University Press:  03 March 2011

S.Y. Hou ,
Julia M. Phillips ,
D.J. Werder ,
T.H. Tiefel ,
J.H. Marshall  and
M.P. Siegal
S.Y. Hou
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D.J. Werder
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
T.H. Tiefel
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J.H. Marshall
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M.P. Siegal
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

Systematic studies have been performed on 1000 Å YBa2Cu3O7−δ films produced by the BaF2 process and annealed in an oxygen partial pressure (Po2) range from 740 Torr to 10 mTorr as well as a temperature range from 600 to 1050 °C. The results show that while high quality films can be annealed in a wide range of oxygen partial pressure, they have different characteristics. In general, crystalline quality and Tc are optimized at high Po2 and high annealing temperature, while strong flux pinning and low normal state resistivity are achieved at lower values of both variables. Under optimized low Po2 conditions, an ion channeling Xmin of 6% is obtained on films as thick as 5000 Å. This study will serve as a useful guide to tailoring film properties to the application at hand.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 8 , August 1994 , pp. 1936 - 1945
Copyright
Copyright © Materials Research Society 1994

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