Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-28T00:39:51.604Z Has data issue: false hasContentIssue false
  • English
  • Français

A TEM study of microstructures of YBa2Cu3O7−x thin films deposited on LaAlO3 by laser ablation

Published online by Cambridge University Press:  31 January 2011

S.N. Basu ,
A.H. Carim  and
T.E. Mitchell
S.N. Basu
Affiliation:
Department of Manufacturing Engineering, Boston University, Boston, Massachusetts 02215
A.H. Carim
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
T.E. Mitchell
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Get access

Abstract

The microstructures of YBa2Cu3O7−x thin films deposited by laser ablation on single crystal (001) LaAlO3 substrates have been investigated. The orientation of the YBa2Cu3O7−x layer next to the interface is found to be completely c-perpendicular, with a high degree of epitaxy between the film and the substrate. Misfit dislocations, with a periodic spacing of around 13 nm, are present at the interface. Two distinct interfacial structures are seen in these films. At a film thickness of around 400 nm, nucleation of c-parallel grains occurs, leading to a switchover from a c, and, and-perpendicular to a c-parallel microstructure. Amorphous particulates, ejected from the target during processing, lead to the formation of misoriented grains, giving rise to high-angle grain boundaries in the film.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 9 , September 1991 , pp. 1823 - 1828
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Bednorz, J. G. and Muller, K. A., Z. Phys. B 64, 189 (1986).CrossRefGoogle Scholar
2.LeGoues, F. K., Philos. Mag. B 57 (2), 167 (1988).CrossRefGoogle Scholar
3.Jin, S., Tiefel, T. H., Nakahara, S., Graebner, J. E., O'Bryan, H. M., Fastnacht, R. A., and Kammlott, G. W., Appl. Phys. Lett. 56 (13), 1287 (1990).CrossRefGoogle Scholar
4.Geerk, J., Linker, G., and Meyer, O., Mater. Sci. Rep. 4,193 (1989).CrossRefGoogle Scholar
5.Kentgens, A. P. M., Carim, A. H., and Dam, B., J. Cryst. Growth 91, 355 (1988).CrossRefGoogle Scholar
6.Neih, C. W., Anthony, L., Josefowicz, J. Y., and Krajenbrink, F. G., Appl. Phys. Lett. 56 (21), 2138 (1990).CrossRefGoogle Scholar
7.Roy, T., Raistrick, I. D., and Mitchell, T. E., in High-Temperature Superconductors: Fundamental Properties and Novel Materials Processing, edited by Christen, D., Narayan, J., and Schneemeyer, L. (Mater. Res. Soc. Symp. Proc. 169, Pittsburgh, PA, 1990), p. 699.Google Scholar
8.Hwang, D. M., Nazar, L., Venkatesan, T., and Wu, X. D., Appl. Phys. Lett. 52 (21), 1834 (1988).CrossRefGoogle Scholar
9.Hsieh, Y. F., Siegal, M. P., Hull, R., and Philips, J. M., Appl. Phys. Lett. 57 (21), 2268 (1990).CrossRefGoogle Scholar
10.Carim, A. H., Basu, S. N., and Muenchausen, R. E., Appl. Phys. Lett. 58 (8), 871 (1991).CrossRefGoogle Scholar
11.Basu, S. N., Roy, T., Mitchell, T. E., Muenchausen, R. E., and Nastasi, M., Proc. Conf. Science and Technology of Thin Film Superconductors, edited by McConnell, R. and Noufi, R., Denver, CO, April 30-May 4, 1990, in press.Google Scholar
12.Singh, R. K. and Narayan, J., J. Appl. Phys. 67, 3785 (1990).CrossRefGoogle Scholar
13.Ramesh, R., Hwang, D., Ravi, T. S., Inam, A., Barner, J. B., Nazar, L., Chang, S. W., Chen, C. Y., Dutta, B., Venkatesan, T., and Wu, X. D., Appl. Phys. Lett. 56, 2243 (1990).CrossRefGoogle Scholar
14.Lee, A. E., Platt, C. E., Burch, J. F., Simon, R. W., Goral, J. P., and Al-Jassim, M.M., Appl. Phys. Lett. 57, 2019 (1990).CrossRefGoogle Scholar
15.Mitchell, T. E., Basu, S. N., Nastasi, M., and Roy, T., in High Resolution Electron Microscopy of Defects in Materials edited by Sinclair, R., Smith, D. J., and Dahmen, U. (Mater. Res. Soc. Symp. Proc. 183v, Pittsburgh, PA, 1990), p. 357.Google Scholar
16.O'Bryan, H. M., Gallagher, P. K., Berkstresser, G. W., and Brandle, C. D., J. Mater. Res. 5, 183 (1990).CrossRefGoogle Scholar
17.Muenchausen, R. E., Hubbard, K. M., Foltyn, S., Estler, R. C., Nogar, N. S, and Jenkins, C., Appl. Phys. Lett. 56, 578 (1990).CrossRefGoogle Scholar
18.Muenchausen, R. E., Dye, R. C., Estler, R. C., Foltyn, S., Garcia, A. R., Hubbard, K. M., Nogar, N. S., Wu, X. D., Carim, A., Mukherjee, A., and Brueck, S. R. J., Proc. 4th Int. SAMPE Electronic Materials and Processes Conference, Albuquerque, NM, June 12–14, 1990, in press.Google Scholar
19.Feenstra, R., Lindemer, T. B., Budai, J. D., and Galloway, M. D., J. Appl. Phys. 69 6569 (1991).CrossRefGoogle Scholar
20.Ramesh, R., Chang, C. C., Ravi, T. S., Hwang, D. M., Inam, A., Xi, X. X., Li, Q., Wu, X. D., and Venkatesan, T., Appl. Phys. Lett. 57 (10), 1064 (1990).CrossRefGoogle Scholar
21.Eom, C. B., Marshall, A. F., Laderman, S. S., Jacowitcz, R. D., and Geballe, T. H., Science 249, 1549 (1990).CrossRefGoogle Scholar
22.Zandbergen, H. W., Gronsky, R., and Thomas, G., Phys. Status Solidi (a) 105, 207 (1988).CrossRefGoogle Scholar
23.Marshall, A. F., Char, K., Barton, R. W., Kapitulnik, A., and Laderman, S. S., J. Mater. Res. 5, 2049 (1990).CrossRefGoogle Scholar
24.Char, K., Lee, M., Barton, R. W., Marshall, A. F., Bozovic, I., Hammond, R. H., Beasley, M. R., Geballe, T. H., and Kapitulnik, A., Phys. Rev. B 38, 834 (1988).CrossRefGoogle Scholar
25.Ramesh, R., Inam, A., Hwang, D. M., Ravi, T. S., Xi, X. X., Wu, X. D, Li, Q., and Venkatesan, T., submitted to J. Mater. Res.Google Scholar
26.Specht, E. D., Sparks, C. J., Dhere, A. G., Brynestad, J., Cavin, O. B., and Kroeger, D. M., Phys. Rev. B 37, 7426 (1988).CrossRefGoogle Scholar
27.Hirth, J. P. and Feng, X., J. Appl. Phys. 67, 3343 (1990).CrossRefGoogle Scholar
28.Kogachi, M., Nakanishi, S., Nakahigashi, K., Minamigawa, S., Sasakura, H., Fukuoka, N., and Yanasi, A., Jpn. J. Appl. Phys. 27 (7), L1228 (1988).CrossRefGoogle Scholar
29.Chan, S. W., Hwang, D. M., and Nazar, L., J. Appl. Phys. 65, (12), 4719 (1989).CrossRefGoogle Scholar
30.Dimos, D., Chaudhari, P., Mannhart, J., and LeGoues, F. K., Phys. Rev. Lett. 61, (2), 219 (1988).CrossRefGoogle Scholar