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The temperature-dependent luminescence properties of BaAl2−xSixO4−xNx:Eu2+ and its application in yellowish-green light emitting diode

Published online by Cambridge University Press:  31 January 2011

Mei Zhang ,
Baohong Li ,
Jing Wang ,
Zhiyang Zhang ,
Qiuhong Zhang  and
Qiang Su
Mei Zhang
Affiliation:
Ministry of Education Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China; and Institute of Functional Materials, WuYi University, Jiangmen, Guangdong 529020, People's Republic of China
Jing Wang*
Affiliation:
Ministry of Education Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China; and Institute of Functional Materials, WuYi University, Jiangmen, Guangdong 529020, People's Republic of China
Qiang Su*
Affiliation:
Ministry of Education Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China
*
a) e-mail: ceswj@mail.sysu.edu.cn
b) e-mail: suqiang@mail.sysu.edu.cn
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Abstract

The influences of (SiN)+ and Eu2+ concentration on the optical properties of BaAl2−xSixO4−xNx:Eu2+ were investigated. The lifetime results show that there are two different cation sites occupied by Eu2+ ions and the energy transfer occurs between them. The Huang–Rhys factor and the Stokes energy shift were determined, and thermal quenching with increasing temperature was observed. Finally, intense yellowish-green light emitting diodes (LED) with the color coordinate of (0.2936, 0.4483) under a forward-bias current of 20 mA was successfully fabricated on the basis of a structure consisting of BaAl2−xSixO4−xNx:Eu2+ phosphor and near-ultraviolet (∼395 nm) GaN chip.

Keywords

NitrideOptical propertiesX-ray diffraction (XRD)
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 8 , August 2009 , pp. 2589 - 2595
Copyright
Copyright © Materials Research Society 2009

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