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Thermal Expansion of Ti5Si3 with Ge, B, C, N, or O Additions

Published online by Cambridge University Press:  31 January 2011

J. J. Williams ,
M. J. Kramer  and
M. Akinc
J. J. Williams
Affiliation:
Ames Laboratory and Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011
M. J. Kramer
Affiliation:
Ames Laboratory and Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011
M. Akinc
Affiliation:
Ames Laboratory and Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011
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Abstract

The crystallographic thermal expansion coefficients of Ti5Si3 from 20 to 1000 °C as a function of B, C, N, O, or Ge content were measured by high-temperature x-ray diffraction using synchrotron sources at Cornell University (Cornell High Energy Synchrotron Source; CHESS) and Argonne National Laboratory (Advanced Photon Source; APS). Whereas the ratio of the thermal expansion coefficients along the c and a axes was approximately 3 for pure Ti5Si3, this ratio decreased to about 2 when B, C, or N atoms were added. Additions of O and Ge were less efficient at reducing this thermal expansion anisotropy. The extent by which the thermal expansion was changed when B, C, N, or O atoms were added to Ti5Si3 correlated with their expected effect on bonding in Ti5Si3.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 8 , August 2000 , pp. 1780 - 1785
Copyright
Copyright © Materials Research Society 2000

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References

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