Published online by Cambridge University Press: 29 July 2011
Variably spaced semiconductor superlattices (VSSLs) exhibited superior electron mobility and rectification because of electronic level alignment. We investigated the thermoelectric properties of VSSL structures using a self-consistent nonequilibrium Green’s function quantum model to capture the ballistic electron transport and anatomistic nonequilibrium Green’s function model to capture the phonon transport. A figure of merit was calculated as a function of temperature for two VSSL strain silicon–germanium materials and a non-VSSL material. Calculation of the figure of merit (ZT) versus temperature for a VSSL demonstrated a 17 times increase in power factor at the expense of a 4 times increase in thermal conductivity at room temperature compared to a comparable uniform superlattice. Calculation determined a ZT of 0.20 for a VSSL compared to a ZT of 0.04 for non-VSSL material at 400 K. VSSLs proved to be a candidate material to further increased ZT near room temperature for superlattice materials.