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Thermogravimetric analysis of the oxidation-inhibiting behavior of nitrogen-implanted silicon

Published online by Cambridge University Press:  29 June 2016

S. Lieb ,
R. K. MacCrone ,
J. Theimer  and
E. W. Maby
S. Lieb
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
R. K. MacCrone
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
J. Theimer
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
E. W. Maby
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

The effectiveness of oxidation-inhibiting nitride layers formed in silicon by ion implantation has been studied by in situ thermogravimetric analysis. The oxidation time delay and the oxidation rate after nitride breakdown were measured for various fluences of implanted nitrogen. The results generally confirm previous findings for the oxidation delay; however, a detailed analysis indicates that the onset of oxidation is not as abrupt as had been previously assumed. After the delay period, the oxidation of an implanted Si/SiO2 structure follows a linear time dependence at oxide thicknesses where unimplanted Si/SiO2 structures follow a parabolic dependence.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 6 , December 1986 , pp. 791 - 796
Copyright
Copyright © Materials Research Society 1986

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