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Thick Pb(Zr,Ti)O3 films fabricated by inducing residual compressive stress during the annealing process

Published online by Cambridge University Press:  03 March 2011

Jae-Wung Lee ,
Jong-Jin Choi ,
Gun-Tae Park ,
Chee-Sung Park  and
Hyoun-Ee Kim
Jae-Wung Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jong-Jin Choi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Gun-Tae Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Chee-Sung Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Hyoun-Ee Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
*
a)Address all correspondence to this author. e-mail: kimhe@snu.ac.kr
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Abstract

The effects of residual stress induced during the annealing process on the microstructural evolution and electrical properties of Pb(Zr,Ti)O3 (PZT) films were investigated. PZT films were deposited on platinized silicon substrates by the radio frequency magnetron sputtering method using a single oxide target. Compressive stress was induced in the film by bending the silicon substrate during sputtering using a specially designed substrate holder and subsequently annealing the film without the holder. Without the residual stress, the PZT film was severely cracked when it was thicker than 2 μm due to the thermal expansion mismatch between the PZT and the Si substrate. On the other hand, when the residual stress was applied, no cracks were detected in the film for thicknesses of up to 4 μm. The suppression of crack formation was attributed to the residual compressive stress that compensated for the tensile stress generated during and/or after the annealing process. The electrical properties of the PZT film with the residual stress were improved compared to those of the PZT film without the residual stress.

Keywords

FerroelectricPiezoelectricThin film
Type
Rapid Communications
Information
Journal of Materials Research , Volume 20 , Issue 11 , November 2005 , pp. 2898 - 2901
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1Polla, D.L. and Francis, L.F.: Ferroelectric thin films in microelectromechanical system application. MRS Bull. 21(7), 59 (1996).Google Scholar
2Biggers, J.V., Shrout, T.R. and Schulze, W.A.: Densification of PZT cast tape by pressing. Ceram. Bull. 58, 516 (1979).Google Scholar
3Jeon, Y.B., Chung, J.S. and No, K.S.: Fabrication of PZT thick films on silicon substrates for piezoelectric actuator. J. Electroceram 4, 195 (2000).Google Scholar
4Tuttle, B.A., Voigt, J.A., Garino, T.J., Goodnow, D.C., Schwartz, R.W., Lamppa, D.L., Headley, T.J., and Eatough, M.O.: Chemically prepared Pb(Zr, Ti)O3 thin films: The effects of orientation and stress, in Proceedings of the IEEE 8th International Symposium on Applied Ferroelectrics, edited by Liu, M., Safari, A., Kingon, A., and Haertling, G. (IEEE, New York, 1922), pp. 344–348.Google Scholar
5Oin, H.X., Zhu, J.S. and Wang, J.Y.: PZT thin films with preferred-orientation induced by external stress. Thin Solid Films 379, 72 (2000).Google Scholar
6Lu, X., Zhu, J., Li, X., Zhang, Z., Zhang, X., Wu, D., Yan, F., Ding, Y. and Wang, Y.: Effect of uniaxial stress on the polarization of SrBi2Ta2O9 thin films. Appl. Phys. Lett. 76, 3103 (2000).CrossRefGoogle Scholar
7Kumazawa, T., Kumagai, Y., Miura, H. and Kitano, M.: Effect of external stress on polarization in ferroelectric thin films. Appl. Phys. Lett. 72, 608 (1998).CrossRefGoogle Scholar
8Kelman, M.B. and Mcltyre, P.C.: Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films. J. Appl. Phys. 93, 9231 (2003).CrossRefGoogle Scholar
9Brantley, W.A.: Calculated elastic constants for stress problems associated with semiconductor devices. J. Appl. Phys. 44, 534 (1973).CrossRefGoogle Scholar
10Park, G.T., Choi, J.J., Ryu, J., Fan, H. and Kim, H.E.: A new method for measuring the piezoelectric coefficients of PZT thin films by the strain-monitoring pneumatic loading method (SMPLM). Appl. Phys. Lett. 80, 4606 (2002).CrossRefGoogle Scholar
11Sengupta, S.S., Park, S.M., Payne, D.A. and Allen, L.H.: Origins and evolution of stress development in sol-gel derived thin layers and multideposited coatings of lead titanate. J. Appl. Phys. 83, 2291 (1998).CrossRefGoogle Scholar
12Zhao, M.H., Fu, R., Lu, D. and Zhang, T.Y.: Critical thickness for cracking of Pb(Zr0.53Ti0.47)O3 thin films deposited on Pt/Ti/Si(100) substrates. Acta Mater 50, 4241 (2002).Google Scholar