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Threading defect elimination in GaN nanowires

Published online by Cambridge University Press:  08 June 2011

Stephen D. Hersee ,
Ashwin K. Rishinaramangalam ,
Michael N. Fairchild ,
Lei Zhang  and
Petros Varangis
Stephen D. Hersee*
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106
Ashwin K. Rishinaramangalam
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106
Michael N. Fairchild
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106
Lei Zhang
Affiliation:
Nanocrystal Corporation, Albuquerque, New Mexico 87124
Petros Varangis
Affiliation:
Nanocrystal Corporation, Albuquerque, New Mexico 87124
*
a)Address all correspondence to this author. e-mail: shersee@chtm.unm.edu
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Abstract

This study describes the elimination of threading dislocations (TDs) in GaN nanostructures. Cross-sectional transmission electron microscopy (XTEM) analysis reveals that the nominal [0001] line direction of a TD changes when it enters a GaN nanostructure and the dislocation then terminates at a sidewall facet. It is suggested that the driving force for this process is the reduction of dislocation line energy, and for a pure-edge dislocation, this TD elimination process can be accomplished simply by dislocation climb. This mechanism is active whenever a threading defect is in close proximity to a surface. Preliminary XTEM analysis of defects in AlGaN and InGaN core–shell growth onto GaN nanostructures is also shown. Although more work is required to improve the quality of core–shell InGaN epitaxial growth, nanostructures appear to offer a route to defect-free, nonpolar GaN-based devices.

Keywords

DislocationsNanostructureTransmission electron microscopy
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 17: Focus Issue: Nanowires: Fundamentals and Applications , 14 September 2011 , pp. 2293 - 2298
Copyright
Copyright © Materials Research Society 2011

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References

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