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Tilted domain growth of metalorganic chemical vapor (MOCVD)-grown ZnO(0001) on α-Al2O3(0001)

Published online by Cambridge University Press:  31 January 2011

C.M. Wang ,
L.V. Saraf ,
T.L. Hubler  and
P. Nachimuthu
C.M. Wang*
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352
L.V. Saraf
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352
T.L. Hubler
Affiliation:
Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352
P. Nachimuthu
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352
*
a)Address all correspondence to this author. e-mail: chongmin.wang@pnl.gov
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Abstract

ZnO grown on α-Al2O3(0001) generally possesses an orientation such that α-Al2O3(0001) is parallel to ZnO(0001) and two in-plane domains nucleate, so that α-Al2O3[11¯20] is parallel to ZnO[11¯20] and/or α-Al2O3[11¯20] is parallel to ZnO[10¯10]. In this paper, we report a new growth mode for ZnO grown on α-Al2O3(0001) using metalorganic chemical vapor deposition (MOCVD). We find that α-Al2O3[11¯20] is parallel to ZnO[10¯10], but the (0001) plane of ZnO is tilted relative to the (0001) plane of α-Al2O3 such that ZnO(0001) is almost parallel to the α-Al2O3(¯1104) plane. This orientation reduces the extent of lattice mismatch. The interface between ZnO and α-Al2O3 is abrupt and possesses periodic dislocations.

Keywords

Thin filmTransmission electron microscopy (TEM)Structural
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 1 , January 2008 , pp. 13 - 17
Copyright
Copyright © Materials Research Society 2008

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