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Toward a metrological calibration of the conversion efficiency in GaAs nanowire-based photodetectors

Published online by Cambridge University Press:  12 July 2017

Davide Cammi ,
Beatrice Rodiek ,
Kseniia Zimmermann ,
Stefan Kück  and
Tobias Voss
Davide Cammi*
Affiliation:
Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), TU Braunschweig University of Technology, Braunschweig D38106, Germany
Beatrice Rodiek
Affiliation:
Physikalisch-Technische Bundesanstalt (PTB), Braunschweig 38116, Germany
Kseniia Zimmermann
Affiliation:
Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), TU Braunschweig University of Technology, Braunschweig D38106, Germany
Stefan Kück
Affiliation:
Physikalisch-Technische Bundesanstalt (PTB), Braunschweig 38116, Germany
Tobias Voss
Affiliation:
Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), TU Braunschweig University of Technology, Braunschweig D38106, Germany
*
a) Address all correspondence to this author. e-mail: d.cammi@tu-braunschweig.de
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Abstract

We describe the main experimental challenges toward the metrological calibration of photodetectors based on single semiconductor nanowires, and we propose a method for the quantification of their photoresponse, focusing in particular on GaAs nanowires. Spatially resolved measurements of the device’s photocurrent were performed with a far-field scanning optical setup and a laser excitation at λ = 656 nm. The photoresponse was quantitatively described by fitting the two-dimensional mapping of the photocurrent at different positions along the main nanowire axis. Our results indicate that the device’s photoresponse strongly depends on the position along the nanowire, which is attributed to the inhomogeneous properties of the device’s contacts. Furthermore, we show that its spatial profile across the nanowire can be directly compared with the profile of the laser beam by taking into account the angle between the scanning direction and the main nanowire axis as a geometrical factor. Finally, we discuss the impacts of laser-induced heating effects on the calibration of such nanoscale devices.

Keywords

nanostructureoptoelectronicphotoconductivity
Type
Invited Papers
Information
Journal of Materials Research , Volume 32 , Issue 13 , 14 July 2017 , pp. 2464 - 2470
Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Winston V. Schoenfeld

References

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