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Transparent Conductive In-doped Cd3TeO6 Thin Films with Perovskite Structure Deposited by Radio Frequency Magnetron Sputtering

Published online by Cambridge University Press:  03 March 2011

Hiroyuki Tetsuka ,
Yue Jin Shan ,
Keitaro Tezuka ,
Hideo Imoto  and
Kiyotaka Wasa
Hiroyuki Tetsuka*
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
Yue Jin Shan
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
Keitaro Tezuka
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
Hideo Imoto
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
Kiyotaka Wasa
Affiliation:
Faculty of Science, Yokohama City University, Nara 631-0045, Japan
*
a) Address all correspondence to this author.e-mail: tetsuka@mwb.biglobe.ne.jp
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Abstract

Transparent conductive In-doped Cd3TeO6 thin films were deposited on silica glass substrate by radio frequency magnetron sputtering using targets composed of CdO, TeO2, and In2O3 powders, and their electrical and optical properties were examined. The electrical resistivity of 3.2 × 10−3 Ωcm and an average transmittance above 80% in the visible region (400–800 nm) were obtained for the films deposited at the substrate temperature above 300 °C. The maximum optical band gap was 3.92 eV for the film deposited at 700 °C, demonstrating a large optical band gap comparable to indium tin oxide.

Keywords

Optical propertiesSputteringTransparent conductor
Type
Rapid Communications
Information
Journal of Materials Research , Volume 20 , Issue 9 , September 2005 , pp. 2256 - 2260
Copyright
Copyright © Materials Research Society 2005

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References

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