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Van der Waals epitaxy and composition control of layered SnSxSe2−x alloy thin films

Published online by Cambridge University Press:  31 January 2020

Joshua J. Fox ,
Xiaotian Zhang ,
Zakaria Y. Al Balushi ,
Mikhail Chubarov ,
Azimkhan Kozhakhmetov  and
Joan M. Redwing
Joshua J. Fox
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Xiaotian Zhang
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Zakaria Y. Al Balushi
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Mikhail Chubarov
Affiliation:
2D Crystal Consortium-Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Azimkhan Kozhakhmetov
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Joan M. Redwing*
Affiliation:
Department of Materials Science and Engineering, 2D Crystal Consortium-Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
*
a)Address all correspondence to this author. e-mail: jmr31@psu.edu
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Abstract

Epitaxial SnSxSe2−x films with tunable band gap energies (1.0–2.2 eV) are of growing interest for photodetectors and 2D heterostructures for nanoscale electronics. In this study, powder vapor transport growth of SnSxSe2−x was investigated on c-plane sapphire and epitaxial graphene (EG)/6H–SiC substrates using tin, sulfur, and selenium powder sources in a heated tube furnace. The SnSxSe2−x composition was controlled by varying the sulfur and selenium source temperatures and the corresponding chalcogen vapor pressure ratio. Raman spectroscopy was used to determine the alloy composition of the films, and the optical properties were characterized using UV-Vis-NIR spectroscopy. SnSxSe2−x grown on sapphire consisted of vertically oriented platelets. By contrast, large-area, planar coalesced SnSxSe2−x films grew on EG with low surface roughness indicative of a van der Waals growth mode. High-resolution X-ray diffraction θ–2θ scans and pole figure analysis confirm that the SnSxSe2−x films are c-axis oriented with epitaxial relation being $\left[ {11\bar{2}0} \right]$ SnSxSe2−x‖$\left[ {10\bar{1}0} \right]$ 6H–SiC.

Keywords

2D materialschemical vapor depositionepitaxy
Type
Article
Information
Journal of Materials Research , Volume 35 , Issue 11: Focus Section: Heterogeneity in Beyond Graphene 2D Materials , 15 June 2020 , pp. 1386 - 1396
Copyright
Copyright © Materials Research Society 2020

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Footnotes

b)

This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/editor-manuscripts/.

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