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Vertical graphene by plasma-enhanced chemical vapor deposition: Correlation of plasma conditions and growth characteristics

Published online by Cambridge University Press:  23 October 2013

Emil Sandoz-Rosado ,
William Page ,
David O’Brien ,
Joshua Przepioski ,
Dennis Mo ,
Benjamin Wang ,
Tam-Triet Ngo-Duc ,
Jovi Gacusan ,
Michael W. Winter  and
M. Meyyappan
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Emil Sandoz-Rosado
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
William Page
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
David O’Brien
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
Joshua Przepioski
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
Dennis Mo
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
Benjamin Wang
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
Tam-Triet Ngo-Duc
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
Jovi Gacusan
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
Michael W. Winter
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
M. Meyyappan
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035
Robert D. Cormia
Affiliation:
Foothill College and UCSC/NASA-ARC Advanced Studies Laboratories, NASA Ames Research Center, Moffett Field, California 94035
Shuhei Takahashi
Affiliation:
Center for Nanotechnology and UCSC/NASA-ARC Advanced Studies Laboratories, NASA Ames Research Center, Moffett Field, California 94035; and Department of Electrical Engineering, University of California Santa Cruz, Santa Cruz, California 95064
Michael M. Oye*
Affiliation:
Center for Nanotechnology and UCSC/NASA-ARC Advanced Studies Laboratories, NASA Ames Research Center, Moffett Field, California 94035; and Department of Electrical Engineering, University of California Santa Cruz, Santa Cruz, California 95064
*
a)Address all correspondence to this author. e-mail: Michael.M.Oye@nasa.gov
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Abstract

Vertically aligned graphene was grown by plasma-enhanced chemical vapor deposition using methane feedstock. Optical emission spectroscopy (OES) was used to monitor the plasma species, and Raman spectroscopy was used for characterizing the properties of as-grown vertically aligned graphene. OES-derived information on plasma species, such as C, C2, CH, and H, are correlated with the properties of the vertically aligned graphene. Graphene grown at 250 W and 15 sccm exhibited the lowest amount of defects. Although OES peak intensities occurred at the highest power and lowest flow conditions, the OES peak ratios of plasma species had a greater dependence on flow rate and exhibited a saddle point in the atomic C/H ratio corresponding to optimal growth involving the lowest amount of overall defects. Plasma diagnostics provides a valuable approach to optimize growth characteristics and material properties.

Keywords

plasma-enhanced CVD (PECVD)Raman spectroscopyvertical graphenedefects
Type
Invited Papers
Information
Journal of Materials Research , Volume 29 , Issue 3: Focus Issue: Graphene and Beyond , 14 February 2014 , pp. 417 - 425
Copyright
Copyright © Materials Research Society 2013 

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