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Void Nucleation in Passivated Interconnect Lines: Effects of Site Geometries, Interfaces, and Interface Flaws

Published online by Cambridge University Press:  31 January 2011

R. J. Gleixner ,
B. M. Clemens  and
W. D. Nix
R. J. Gleixner
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
B. M. Clemens
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
W. D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
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Abstract

Stress driven nucleation of voids in passivated aluminum interconnect lines is analyzed within the context of classical nucleation theory. A discussion of sources of tensile stress in such lines leads to an upper limit of 2 GPa. Calculations suggest that even at this high stress, nucleation rates are far too low to account for observed rates of voiding. Void formation at a circular defect at the line/passivation interface is then considered. In this case, a flaw on the order of nanometers in size may develop into a void under the imposed stress. These results strongly suggest that void nucleation in aluminum interconnect lines can be controlled by eliminating defects in the line/passivation interface.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 8 , August 1997 , pp. 2081 - 2090
Copyright
Copyright © Materials Research Society 1997

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