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Wet forming, sintering behavior, and dielectric properties of BaTi0.8Zr0.2O3

Published online by Cambridge University Press:  31 January 2011

Yoshihiro Hirata  and
Takahiro Kawazoe
Yoshihiro Hirata
Affiliation:
Department of Applied Chemistry and Chemical Engineering, Kagoshima University, 1-21-40 Korimoto, Kagoshima 890, Japan
Takahiro Kawazoe
Affiliation:
Department of Applied Chemistry and Chemical Engineering, Kagoshima University, 1-21-40 Korimoto, Kagoshima 890, Japan
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Abstract

Density, grain size, lattice parameter, and dielectric properties were measured on BaTi0.8Zr0.2O3 sintered at 1100–1600 °C. The hydrothermally prepared BaTi0.8Zr0.2O3 particles of 128 nm diameter were consolidated by filtration of 2-methoxyethanol suspensions and subsequently compressed by isostatic pressing under a pressure of 294 MPa to form a uniform microstructure of high density (52% of the theoretical density). These green compacts were sintered to a relative density of above 99% in the temperature range from 1350 to 1600 °C where rapid grain growth to above 30 μm occurred. Increase of sintering temperature was accompanied by the increase of lattice parameter and dielectric constant of BaTi0.8Zr0.2O3 at room temperature. The sintered BaTi0.8Zr0.2O3 showed a diffuse phase transition from paraelectric (higher temperature) to ferroelectric state (lower temperature) at 32 °C.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 12 , December 1996 , pp. 3071 - 3076
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1.Arlt, G., Hennings, D., and de With, G., J. Appl. Phys. 58, 1619 (1985).CrossRefGoogle Scholar
2.Oonishi, K., Morohashi, T., and Uchino, K., J. Ceram. Soc. Jpn. 97, 473 (1989).CrossRefGoogle Scholar
3.Nambu, S., Bull. Ceram. Soc. Jpn. 30, 483 (1995).Google Scholar
4.Newnham, R. E. and McKinstry, T., Ceramic Transactions Vol. 32, Dielectric Ceramics: Processing, Properties and Applications, edited by Nair, K. M., Guha, J.P., and Okamoto, A. (American Ceramic Society, Westerville, OH, 1993), p. 1.Google Scholar
5.Hirata, Y., Nitta, A., and Kawabata, M., J. Ceram. Soc. Jpn. 102, 1168 (1994).Google Scholar
6.Hirata, Y., Nitta, A., Sameshima, S., and Kamino, Y., Mater. Lett. (1996, in press).Google Scholar
7.Jaffe, B., Cook, W. R. Jr, and Jaffe, H., Piezoelectric Ceramics (Academic Press, London, 1971), p. 53.Google Scholar
8.Hirata, Y., Haraguchi, I., and Ishihara, Y., J. Mater. Res. 7, 2572 (1992).CrossRefGoogle Scholar
9.Hirata, Y. and Kawabata, M., Mater. Lett. 16, 175 (1993).CrossRefGoogle Scholar
10.McQuarrie, M. and Behnke, F.W., J. Am. Ceram. Soc. 37, 539 (1954).CrossRefGoogle Scholar
11.Hedges, M. M., Bannister, M. J., and Gani, M. S. J., J. Am. Ceram. Soc. 74, 2318 (1991).CrossRefGoogle Scholar
12.Yamamoto, T. and Sakuma, T., J. Ceram. Soc. Jpn. 98, 846 (1990).CrossRefGoogle Scholar
13.Kazaoui, S. and Ravez, J., J. Mater. Sci. 28, 1211 (1993).CrossRefGoogle Scholar