Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-02-10T19:06:28.609Z Has data issue: false hasContentIssue false
  • English
  • Français

Wetting and interface microstructure between Sn–Zn binary alloys and Cu

Published online by Cambridge University Press:  31 January 2011

Katsuaki Suganuma ,
Koichi Niihara ,
Takeshi Shoutoku  and
Yoshikazu Nakamura
Katsuaki Suganuma*
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567, Japan
Koichi Niihara
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567, Japan
Takeshi Shoutoku
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Hashirimizu 1-10-20, Yokosuka, Kanagawa 239, Japan
Yoshikazu Nakamura
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Hashirimizu 1-10-20, Yokosuka, Kanagawa 239, Japan
*
a) Address correspondence to this author. suganuma@sanken.osaka-u.ac.jp
Get access

Abstract

Sn–Zn binary alloys have been examined as a lead-free solder. Zn distributes in a Sn matrix as platelets. The hypoeutectic alloys show two endothermic peaks in DTA, which correspond to the eutectic and the liquidus temperatures. Three reaction layers are formed at the Sn–Zn/Cu interface without containing Sn: the thick γ–Cu5Zn8 adjacent to the solder, the thin β′–CuZn in the middle, and the thinnest layer adjacent to Cu. Although many nonwetting regions and voids are formed at the interface because of poor wetting, soldering at 290 °C can form a rigid interface, and tensile strength reaches about 40 MPa.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 10 , October 1998 , pp. 2859 - 2865
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For example, Special issue papers in J. Electron. Mater. 23, 691 (1994), and in JOM 45, 36 (1993).CrossRefGoogle Scholar
2.Suganuma, K. and Nakamura, Y., J. Jpn. Inst. Metals 59, 1299 (1995).CrossRefGoogle Scholar
3.Nakase, H., Suganuma, K., and Nakamura, Y., J. Jpn. Inst. Interconnecting and Packaging Electronic Circuits 11, 506 (1997).CrossRefGoogle Scholar
4.McCormack, M. and Jin, S., JOM 45, 36 (1993).CrossRefGoogle Scholar
5.Melton, C., JOM 45, 33 (1993).CrossRefGoogle Scholar
6.Miller, C. H., Anderson, I. E., and Smith, J. F., J. Electron. Mater. 23, 595 (1994).CrossRefGoogle Scholar
7.Wood, E. P. and Nimmo, K. L., J. Electron Mater. 23, 709 (1994).CrossRefGoogle Scholar
8.McCormack, M. and Jin, S., J. Electron. Mater. 23, 635 (1994).CrossRefGoogle Scholar
9.Hansen, M., Constitution of Binary Alloys (McGraw-Hill Book Co., Inc, New York, 1958).CrossRefGoogle Scholar