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A Study of Creep Behavior of TSV-Cu Based on Nanoindentaion Creep Test

Published online by Cambridge University Press:  05 August 2016

W. Wu ,
F. Qin ,
T. An  and
P. Chen
W. Wu
Affiliation:
College of Mechanical Engineering and Applied Electronics Technology Beijing University of Technology Beijing, China
F. Qin
Affiliation:
College of Mechanical Engineering and Applied Electronics Technology Beijing University of Technology Beijing, China
T. An*
Affiliation:
College of Mechanical Engineering and Applied Electronics Technology Beijing University of Technology Beijing, China
P. Chen
Affiliation:
College of Mechanical Engineering and Applied Electronics Technology Beijing University of Technology Beijing, China
*
*Corresponding author (antong@bjut.edu.cn)
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Abstract

Through-Silicon-Via (TSV) is considered to be the most potential solution for 3D electronic packaging, and the mechanical properties of TSV-Cu are critical for TSV reliability improving. In this paper, to make deeply understand the creep behavior of TSV-Cu, nanoindentation creep tests were conducted to obtain its creep parameters. At first, the TSV specimens were fabricated by means of a typical TSV manufacturing process. Then a combination programmable procedure of the constant indentation strain rate method and the constant load method was employed to study the creep behavior of TSV-Cu. To understand the influence of the previous loading schemes, including the different values of the indentation strain and the maximum depths, the nanoindentation creep tests under different loading conditions were conducted. The values of creep strain rate sensitivity m were derived from the corresponding displacement-holding time curves, and the mean value of m finally determined was 0.0149. The value of m is considered no obvious correlation with the different indentation strain rates and the maximum depths by this method. Furthermore, the mechanism for the room temperature creep was also discussed, and the grain boundaries might play an significant role in this creep behavior.

Keywords

Through-Silicon-ViaTSV-CuNanoindentationMechanical properties
Type
Research Article
Information
Journal of Mechanics , Volume 32 , Issue 6 , December 2016 , pp. 717 - 724
Copyright
Copyright © The Society of Theoretical and Applied Mechanics 2016 

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