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Charge effect in secondary electron emission from silicon surface induced by slow neon ions

Published online by Cambridge University Press:  14 June 2012

Zhongfeng Xu ,
Lixia Zeng ,
Yongtao Zhao ,
Jianguo Wang ,
Yuyu Wang ,
Xiaoan Zhang ,
Guoqing Xiao  and
Fuli Li
Zhongfeng Xu*
Affiliation:
HCI Joint Center of Xi'an Jiaotong University and Institute of Modern Physics, China Department of Applied Physics, Xi'an Jiaotong University, Xi'an, China Institute of Modern Physics, Chinese Academy of Science, Lanzhou, China
Lixia Zeng
Affiliation:
HCI Joint Center of Xi'an Jiaotong University and Institute of Modern Physics, China Department of Applied Physics, Xi'an Jiaotong University, Xi'an, China School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang, China
Yongtao Zhao
Affiliation:
HCI Joint Center of Xi'an Jiaotong University and Institute of Modern Physics, China Institute of Modern Physics, Chinese Academy of Science, Lanzhou, China
Jianguo Wang
Affiliation:
HCI Joint Center of Xi'an Jiaotong University and Institute of Modern Physics, China Department of Applied Physics, Xi'an Jiaotong University, Xi'an, China
Yuyu Wang
Affiliation:
Institute of Modern Physics, Chinese Academy of Science, Lanzhou, China
Xiaoan Zhang
Affiliation:
Institute of Modern Physics, Chinese Academy of Science, Lanzhou, China School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang, China
Guoqing Xiao
Affiliation:
HCI Joint Center of Xi'an Jiaotong University and Institute of Modern Physics, China Institute of Modern Physics, Chinese Academy of Science, Lanzhou, China
Fuli Li
Affiliation:
HCI Joint Center of Xi'an Jiaotong University and Institute of Modern Physics, China Department of Applied Physics, Xi'an Jiaotong University, Xi'an, China
*
Address correspondence and reprint requests to: Zhongfeng Xu, Department of Applied Physics, Xi'an Jiaotong University, Xi'an, China. E-mail: zhfxu@mail.xjtu.edu.cn
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Abstract

Total electron emission yield for impact of slow Neq+(q = 2, 4, 6, 8) ions with various kinetic energy under normal incidence on n-type Si has been measured. It is shown that for the same charge state, the total electron yield γ increases linearly as the kinetic energy of projectile at impact increases, up to velocities corresponding to the “classical” threshold. Separation of kinetic electron yield γKE and potential electron yield γPE shows that γPE is proportional to the ion charge state and γKE increases linearly with projectile velocity. Finally, based on “single hole without hopping” hypothesis, the expression of the “CRF” F(q) is given, and the relation between γKE and q is obtained successfully for the first time, which is also a basis for judging whether the “trampoline effect” exists.

Keywords

Charge restrain factorElectron emission yieldHighly charged ions (HCI)Threshold velocity
Type
Research Article
Information
Laser and Particle Beams , Volume 30 , Issue 2 , June 2012 , pp. 319 - 324
Copyright
Copyright © Cambridge University Press 2012

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