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Dependence of silicon ablation regimes on fluence during ultrafast laser irradiation

Published online by Cambridge University Press:  07 January 2016

M. Polek  and
A. Hassanein
M. Polek*
Affiliation:
Center for Materials Under eXtreme Environment (CMUXE), School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA
A. Hassanein
Affiliation:
Center for Materials Under eXtreme Environment (CMUXE), School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA
*
Address correspondence and reprint requests to: M. Polek, Center for Materials Under eXtreme Environment (CMUXE), School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA. E-mail: mpolek@purdue.edu
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Abstract

Models and experiments were developed to study femtosecond laser ablation of silicon using 800 nm, 40 fs pulses with fluences ranging from 0.5 to 35 J/cm2. At low fluences, ablation was found to occur due to bubble formation and splashing within the melt layer. At higher fluences, it was found that the ablation depth exceeded the melt layer depth due to shockwave ablation. The variation in ion flux and ion velocity was also studied both experimentally and theoretically. It was found that the variation in ion flux is mainly dependent on the variation in the average charge state, with only a small variation in the total number of ions above $\sim \!\!1.5\; \,{\rm J/c}{{\rm m}^2}$. Comparisons between the theoretical and experimental ion flux showed that higher charge state ions received greater portion of the laser energy compared with lower charge state ions.

Keywords

AblationFemtosecond laserIon propertiesModeling
Type
Research Article
Information
Laser and Particle Beams , Volume 34 , Issue 1 , March 2016 , pp. 143 - 150
Copyright
Copyright © Cambridge University Press 2016 

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