Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T11:30:20.535Z Has data issue: false hasContentIssue false

Nucleation and growth of Si nanoparticles under different pulse repetition rates without the baffle for nanosecond pulsed laser-ablated deposition

Published online by Cambridge University Press:  06 February 2020

Z. C. Deng
Affiliation:
College of Physics Science and Technology, Hebei University, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, Baoding071002, China
X. X. Pang
Affiliation:
College of Physics Science and Technology, Hebei University, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, Baoding071002, China
X. C. Ding
Affiliation:
College of Physics Science and Technology, Hebei University, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, Baoding071002, China
L. Z. Chu
Affiliation:
College of Physics Science and Technology, Hebei University, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, Baoding071002, China
X. D. Meng
Affiliation:
College of Physics Science and Technology, Hebei University, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, Baoding071002, China
Y. L. Wang*
Affiliation:
College of Physics Science and Technology, Hebei University, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, Baoding071002, China Baoding Preschool Education College, Baoding072750, China
*
Author for correspondence: Y. L. Wang, Hebei University, Baoding 071002, and Baoding Preschool Education College, Baoding072750, China. E-mail: hdwangyl@hbu.edu.cn

Abstract

In this article, Si nanoparticle (NP) films were prepared by pulsed laser ablation (PLA) in the argon atmosphere of 10 Pa at room temperature under different pulse repetition rates from 1 to 40 Hz without the baffle. Different from the conventional PLA method, the substrates were placed below and parallel to the ablated plume axis. The obtained films containing NPs were characterized by scanning electron microscopy and Raman spectrometer. The experimental results under constant laser fluence demonstrate the strong dependence of the mean size and the area number density of NPs on the repetition rate. Specifically, with the increase of pulse repetition rate, the mean size of the NPs in the film first decreases and reaches its minimum at 20 Hz, and then increases after 20 Hz, and decreases again till 40 Hz. The area number density shows the contrary trend versus mean size. The in situ diagnostic results of Langmuir probe denote the ablated Si ion density increases monotonously with the increase of repetition rate, while the temperature is almost constant. Combining with the nucleation probability, the growth/aggregation duration of NPs in the “nucleation region” and the effect of the baffle, the influence of pulse repetition rate on the formation of NPs is addressed. It is found that the repetition rate impacts the growth modes of NPs (i.e., growth and aggregation). 1–20, 20–30, and 30–40 Hz, respectively, correspond to growth-, aggregation-, and growth-controlled rate ranges without the baffle; however, 1–10, 10–20, and 20–40 Hz, respectively, correspond to growth-controlled, aggregation/growth-coexisted, and aggregation-controlled rate ranges with the baffle.

Type
Research Article
Copyright
Copyright © Cambridge University Press 2020

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Akram, M, Bashir, S, Hayat, A, Mahmood, K, Ahmad, R and Khaleeq-U-Rahaman, M (2014) Effect of laser irradiance on the surface morphology and laser induced plasma parameters of zinc. Laser and Particle Beams 32, 119128.CrossRefGoogle Scholar
Alti, K and Khare, A (2006) Low-energy low-divergence pulsed indium atomic beam by laser ablation. Laser and Particle Beams 24, 4753.CrossRefGoogle Scholar
Anastassiya, S, Ahmed, E and Ahmed, H (2018) Computer simulation and experimental benchmarking of ultrashort pulse laser ablation of metallic targets. Laser and Particle Beams 36, 144153.Google Scholar
Anoop, KK, Verma, N, Joy, N, Harilal, SS and Philip, R (2018) Enhancement of optical emission and ion currents in a laser produced silicon plasma by femtosecond laser-induced periodic surface structuring. Physics of Plasmas 25, 063304.CrossRefGoogle Scholar
Batani, D, Vinci, T and Bleiner, D (2014) Laser-ablation and induced nanoparticle synthesis. Laser and Particle Beams 32, 17.CrossRefGoogle Scholar
Carlos, GN, Alejandro, FB, Nair, L and Basilio, JG (2018) A novel growth method to improve the quality of GaAs nanowires grown by Ga-assisted chemical beam epitaxy. Nano Letters 18, 36083615.Google Scholar
Chen, G and Bi, J (2017) Study on melting and thermal-stress damage thresholds of silicon induced by long pulsed laser at 0.532, 1.064 and 10.6 µm. Optik 131, 917924.CrossRefGoogle Scholar
Cho, EC, Park, SW, Hao, XJ, Song, DY, Conibeer, G, Park, SC and Green, MA (2008) Silicon quantum dot/crystalline silicon solar cells. Nanotechnology 19, 245201.CrossRefGoogle ScholarPubMed
El-Atab, N, Ozcan, A, Alkis, S, Okyay, AK and Nayfeh, A (2014) Silicon NP charge trapping memory cell. Physica Status Solidi-Rapid Research Letters 8, 629633.CrossRefGoogle Scholar
El-Atab, N, Ozcan, A, Alkis, S, Okyay, AK and Nayfeh, A (2015) Memory effect by charging of ultra small 2 nm laser synthesized solution processable Si NPs embedded in Si Al2O3-SiO2 structure. Physica Status Solidi (A) 212, 17511755.CrossRefGoogle Scholar
Fu, GS, Wang, YL, Chu, LZ, Zhou, Y, Yu, W, Han, L and Peng, YC (2005) The size distribution of Si NPs prepared by pulsed-laser ablation in pure He, Ar or Ne gas. Europhysics Letters 69, 758762.CrossRefGoogle Scholar
Gamaly, EG, Madsen, NR, Duering, M, Rode, AV and Luther-Davies, B (2005) Ablation of metals with picosecond laser pulses: evidence of long-lived non-equilibrium surface states. Laser and Particle Beams 23, 167176.CrossRefGoogle Scholar
Gu, L, David, JH, Qin, ZT, Anglin, E, Joo, JY, Mooney, DJ, Howell, SB and Sailor, MJ (2013) In vivo time-gated fluorescence imaging with biodegradable luminescent porous silicon NPs. Nature Communication 4, 23262332.CrossRefGoogle Scholar
Guo, JM, Ye, C, Wang, XY, Yang, PF and Zhang, S (2017 a) Effect of driving frequency on the structure of silicon grown on Ag (111) films by very-high-frequency magnetron sputtering. Chinese Physics B 26, 065207.CrossRefGoogle Scholar
Guo, JM, Ye, C, Wang, XY, Yang, PF and Zhang, S (2017 b) Growth and structural properties of silicon on Ag films prepared by 40.68 MHz very-high-frequency magnetron sputtering. Plasma Science and Technology 19, 8996.CrossRefGoogle Scholar
Heimburger, R, Deßmann, N, Teubner, T, Schramm, HP, Boeck, T and Fornari, R (2012) Polycrystalline Si films on glass grown by amorphous–liquid–crystalline transition at temperatures below 330°C. Thin Solid Films 520, 17841788.CrossRefGoogle Scholar
Hijazi, H, Dubrovskii, VG and Monier, G (2018) Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates. The Journal of Physical Chemistry C 122, 1923019235.CrossRefGoogle Scholar
Ikurou, U, Yusuke, H, Hiroshi, F, Naomichi, S, Tamao, A and Akira, S (2016) Dynamics of colliding laser ablation plumes in background gas. Applied Physics A 122, 485.Google Scholar
Il'ves, VG, Zuev, MG, Sokovnin, SY and Murzakaev, AM (2015) Properties of an amorphous silicon dioxide nanopowder prepared by pulsed electron beam evaporation. Physics of the Solid State 57, 25122518.CrossRefGoogle Scholar
Karakiz, M, Toydemir, B, Unal, B and Colakerol, AL (2014) Growth of shape controlled silicon nanowhiskers by electron beam evaporation. The European Physical Journal Applied Physics 65, 20403.CrossRefGoogle Scholar
Li, H, Guan, LL, Xu, ZQ, Zhao, Y, Sun, J, Wu, JD and Xu, N (2016) Synthesis and characterization of amorphous SiO2 nanowires via pulsed laser deposition accompanied by N2 annealing. Applied Surface Science 389, 705712.CrossRefGoogle Scholar
Liu, DG, Zheng, L, Liu, JQ, Luo, LM and Wu, YC (2018) Structure and lubricated tribological behavior of silicon incorporated carbon nitride composite films deposited by magnetron sputtering. Diamond and Related Materials 82, 115123.CrossRefGoogle Scholar
Maier-Flaig, F, Rinck, J, Stephan, M, Bocksrocker, T, Bruns, M, Kübel, C, Powell, AK, Ozin, GA and Lemmer, U (2013) Multicolor silicon light-emitting diodes (SiLEDs). Nano Letters 13, 475480.CrossRefGoogle Scholar
Morales, AM and Lieber, CM (1998) A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279, 208211.CrossRefGoogle ScholarPubMed
Myungjoon, K, Saho, O, Taesung, K, Hidenori, H and Takafumi, S (2016) Synthesis of NPs by laser ablation: a review. KONA Powder and Particle Journal 88, 111.Google Scholar
Peng, F, Wang, J, Ge, GL, He, T, Cao, LX, He, YH, Ma, H and Sun, SQ (2013) Photochemical reduction of CO2 catalyzed by silicon nanocrystals produced by high energy ball milling. Materials Letters 92, 6567.CrossRefGoogle Scholar
Polek, M and Hassanein, A (2016) Dependence of silicon ablation regimes on fluence during ultrafast laser irradiation. Laser and Particle Beams 34, 143150.CrossRefGoogle Scholar
Qi, DF, Zhang, ZF, Yu, XH and Zhang, YW (2018) Visualization of nanosecond laser-induced dewetting, ablation and crystallization processes in thin silicon films. Physics Letters A 382, 15401544.CrossRefGoogle Scholar
Sarfraz, SMA, Bashir, S and Mahmood, K (2019) Laser sputtering of Zr under Ar and O2 environments explored by quartz crystal microbalance and SEM analysis. Laser and Particle Beams 37, 128140.CrossRefGoogle Scholar
Satoh, Y, Itoh, Y, Kawashima, T and Washio, K (2017) Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate. Thin Solid Films 621, 4246.CrossRefGoogle Scholar
Shah, SA and Cui, S (2015) Preparation of silicon nanomaterials by arc discharge. Materials Science in Semiconductor Processing 40, 491500.CrossRefGoogle Scholar
Shaheen, ME, Gagnon, JE and Fryer, BJ (2019) Scanning electron microscope studies on laser ablation of solids. Laser and Particle Beams 37, 101109.CrossRefGoogle Scholar
Singh, KS, Khare, A and Sharma, AK (2017) Effect of uniform magnetic field on laser-produced Cu plasma and the deposited particles on the target surface. Laser and Particle Beams 35, 352361.CrossRefGoogle Scholar
Sobhani, M and Mahdieh, MH (2013) Comparison of sub-micro/nano structure formation on polished silicon surface irradiated by nanosecond laser beam in ambient air and distilled water. Laser and Particle Beams 13, 19.Google Scholar
Sukkaew, P, Kalered, E, Erik, J, Kordina, O, Örjan, D and Lars, O (2018) Growth mechanism of SiC chemical vapor deposition: adsorption and surface reactions of active Si species. The Journal of Physical Chemistry C 122, 648661.CrossRefGoogle Scholar
Sun, WF, Zeng, QH, Yu, AB and Kevin, K (2013) Calculation of normal contact forces between silica nanospheres. Langmuir 29, 78257837.CrossRefGoogle ScholarPubMed
Torrisi, L, Ceccio, G, Restuccia, N, Messina, E, Gucciardi, PG and Cutroneo, M (2017) Laser-generated plasmas by graphene nanoplatelets embedded into polyethylene. Laser and Particle Beams 35, 294303.CrossRefGoogle Scholar
Trusso, S, Barletta, E, Barreca, F and Fazio, EG (2005) Time resolved imaging studies of the plasma produced by laser, ablation of silicon in O2/Ar atmosphere. Laser and Particle Beams 23, 149153.CrossRefGoogle Scholar
Wang, YL, Deng, ZC, Fu, GS, ZhouY, CL and Peng, YC (2006) The average size of Si NPs prepared by pulsed laser ablation in the gas mixture of He/Ar, Ne/Ar or He/Ne. Thin Solid Films 515, 18971901.CrossRefGoogle Scholar
Wang, YL, Xu, W, Zhou, Y, Chu, LZ and Fu, GS (2007) Influence of pulse repetition rate on the average size of silicon NPs deposited by laser ablation. Laser and Particle Beams 25, 913.CrossRefGoogle Scholar
Wang, YL, Deng, ZC, Chu, LZ, Fu, GS and Peng, YC (2009) The difference of energies of Si atoms with single-crystalline, amorphous, free and nanoparticle configurations. Europhysics Letters 86, 15001.CrossRefGoogle Scholar
Wang, YL, Chen, C, Ding, XC, Chu, LZ, Deng, ZC, Liang, WH, Chen, JZ and Fu, GS (2011) Nucleation and growth of nanoparticles during pulsed laser deposition in an ambient gas. Laser and Particle Beams 29, 105111.CrossRefGoogle Scholar
Wang, YL, Qin, AL, Chu, LZ, Deng, ZC, Ding, XC and Guan, L (2017) A nucleation and growth model of silicon nanoparticles produced by pulsed laser deposition via Monte Carlo simulation. Modern Physics Letters B 31, 1750021.CrossRefGoogle Scholar
Wang, DC, Zhang, C, Zeng, P, Zhou W, J, Ma, L, Wang, HT, Zhou, ZQ, Hu, F, Zhang, SY, Lu, M and Wu, X (2018) An all-silicon laser based on silicon nanocrystals with high optical gains. Science Bulletin 63, 57.Google Scholar
Yan, H, Cingarapu, S, Klabunde, KJ, Chakrabarti, A and Sorensen, CM (2009) Nucleation of gold nanoparticle superclusters from solution. Physical Review Letters 102, 09550.CrossRefGoogle ScholarPubMed
Yu, XH, Xue, FH, Huang, H, Liu, CJ, Yu, JY, Sun, YJ, Dong, XL, Cao, GZ and Jung, YG (2014) Synthesis and electrochemical properties of silicon nanosheets by DC arc discharge for lithium-ion batteries. Nanoscale 6, 68606864.CrossRefGoogle ScholarPubMed
Zehra, K, Bashir, S, Hassan, SA, Ahmed, QS, Akram, M and Hayat, A (2017) The effect of nature and pressure of ambient environment on laser-induced breakdown spectroscopy and ablation mechanisms of Si. Laser and Particle Beams 35, 492504.CrossRefGoogle Scholar
Zeng, QH, Yu, AB and Lu, GQ (2010) Evaluation of interaction forces between nanoparticles by molecular dynamics simulation. Industrial & Engineering Chemistry Research 49, 1279312797.CrossRefGoogle Scholar
Zhang, W, Shen, R, Ye, Y, Wu, L, Zhu, P and Hu, Y (2017) Distribution and formation of particles produced by laser ablation of cyclotetramethylene tetranitramine. Laser and Particle Beams 35, 391396.CrossRefGoogle Scholar
Zhang, D, Chen, AM, Wang, XW, Wang, Y, Sui, LZ, Ke, D, Li, SY, Jiang, YF and Jin, MX (2018) Influence of the distance between target surface and focal point on the expansion dynamics of a laser-induced silicon plasma with spatial confinement. Spectrochimica Acta Part B 143, 7177.CrossRefGoogle Scholar
Zhao, JH, Li, CH and Wang, JN (2016) Properties of conical microstructures formed on silicon surfaces via nanosecond laser ablation under vacuum. Optical and Quantum Electronics 48, 2228.CrossRefGoogle Scholar
Zhu, B, Jin, Y, Tan, YL, Zong, LQ, Hu, Y, Chen, L, Chen, YB, Zhang, Q and Zhu, J (2015) Scalable production of Si NPs directly from low grade sources for lithium-ion battery anode. Nano Letters 15, 57505753.CrossRefGoogle Scholar
Zohar, H, Shalom, E and Erez, R (2019) Collisionals induced by laser radiation pressure. Laser and Particle Beams 37, 268275.Google Scholar