Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-10T11:35:33.159Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface exfoliation analysis on single-crystal silicon under compressed plasma flow action

Published online by Cambridge University Press:  12 March 2018

J. Shen ,
I. Shahid ,
X. Yu ,
J. Zhang ,
H.W. Zhong ,
X. Yu ,
W.Y. Huang ,
G.Y. Liang ,
X.J. Cui  and
S. Yan
...Show all authors
J. Shen
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China International Research Center for Nuclei and Particles in Cosmos, Beihang University, Beijing 100191, P.R. China Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
I. Shahid
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China
X. Yu
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China Tomsk Polytechnic University, Tomsk 634050, Russia
J. Zhang
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China
H.W. Zhong
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China
X. Yu
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China
W.Y. Huang
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China
G.Y. Liang
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China
X.J. Cui
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China
S. Yan
Affiliation:
Institute of Heavy Ion Physics, Peking University, Beijing 100871, P.R. China
X.F. Zhang
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China
X.Y. Le*
Affiliation:
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China International Research Center for Nuclei and Particles in Cosmos, Beihang University, Beijing 100191, P.R. China Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
*
Author for correspondence: X.Y. LE, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China. E-mail: xyle@buaa.edu.cn
Get access Rights & Permissions [Opens in a new window]

Abstract

Surface exfoliation was observed on single-crystal silicon surface under the action of compressed plasma flow (CPF). This phenomenon is mainly attributed to the strong transient thermal stress impact induced by CPF. To gain a better understanding of the mechanism, a micro scale model combined with thermal conduction and linear elastic fracture mechanics was built to analyze the thermal stress distribution after energy deposition. After computation with finite element method, J integral parameter was applied as the criterion for fracture initiation evaluation. It was demonstrated that the formation of surface exfoliation calls for specific material, crack depth, and CPF parameter. The results are potentially valuable for plasma/matter interaction understanding and CPF parameter optimization.

Keywords

Compressed plasma flowfinite element methodfracture mechanicsJ integralsingle-crystal silicon
Type
Research Article
Information
Laser and Particle Beams , Volume 36 , Issue 1 , March 2018 , pp. 129 - 135
Copyright
Copyright © Cambridge University Press 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Astashynski, VM, Ananin, SI, Askerko, VV, Kostyukevich, EA, Kuzmitski, AM, Uglov, VV, Anishchik, VM, Astashynski, VV, Kvasov, NT and Danilyuk, AL (2004) Materials surface modification using quasi-stationary plasma accelerators. Surface and Coatings Technology 181, 392–395.CrossRefGoogle Scholar
Astashynski, VM, Ananin, SI, Emelyanenko, AS, Kostyukevich, EA, Kuzmitzky, AM, Zhvavy, SP and Uglov, VV (2006) Bulk periodic structures formation on monocrystalline silicon surface under the action of compression plasma flows. Applied Surface Science 253(4), 1866–1872.CrossRefGoogle Scholar
Bailey, NP and Sethna, JP (2003) Macroscopic measure of the cohesive length scale: Fracture of notched single-crystal silicon. Physical Review B 68(20), 205204-1-8.CrossRefGoogle Scholar
Danilewsky, A, Wittge, J, Kiefl, K, Allen, D, McNally, P, Garagorri, J, Elizalde, MR, Baumbach, T and Tanner, BK (2013) Crack propagation and fracture in silicon wafers under thermal stress. Journal of Applied Crystallography 46, 849–855.Google Scholar
Dojčinović, IP, Kuraica, MM, Obradovć, BM, Cvetanović, N and Purić, J (2007a) Optimization of plasma flow parameters of the magnetoplasma compressor. Plasma Source Science Technology 16, 72–79.CrossRefGoogle Scholar
Dojčinović, IP, Kuraica, MM and Puric, J (2007b) Silicon single crystal surface modification by compression plasma flow action. Publications De Lobservatoire Astronomique De Beograd 82(82), 71–82.Google Scholar
Dojčinović, IP, Kuraica, MM and Purić, J (2010) Material surface damage by quasistationary compression plasma flow action. Vacuum 85, 596–600.Google Scholar
Eshelby, JD (1999). Energy Relations and the Energy-Momentum Tensor in Continuum Mechanics. Berlin Heidelberg: Springer, pp. 82–119.Google Scholar
Federici, G, Andrew, P, Barabaschi, P, Brooks, J, Doerner, R, Geier, A, Herrmann, A, Janeschitz, G, Krieger, K, Kukushkin, A, Loarte, A, Neu, R, Saibene, G, Shimada, M, Strohmayer, G and Sugihara, M (2003) Key ITER plasma edge and plasma-material interaction issues. Journal of Nulcear Materials 313–316, 11–22.Google Scholar
Fitzgerald, AM, Dauskardt, RH and Kenny, TW (2000) Fracture toughness and crack growth phenomena of plasma-etched single crystal silicon. Sensors and Actuators 83, 94–199.Google Scholar
Gao, YY, Qin, Y, Dong, C and Li, GZ (2014) From crater eruption to surface purification of raw silicon: a treatment by pulsed electron beam. Applied Surface Science 311, 413–421.Google Scholar
Garkusha, IE, Malykhin, SV, Makhlai, VA, Pugachev, AT, Bazdyrieva, SV and Aksenov, NN (2014) Changes in the structure and substructure of tungsten during irradiation by hydrogen plasma flows at the specific energy close to the heat loads on the ITER surface. Technical Physics 59(11), 1620–1625.Google Scholar
Gnyusov, SF, Rotshtein, VP, Mayer, AE, Rostov, VV, Gunin, AV, Khishchenko, KV and Levashov, PR (2016) Simulation and experimental investigation of the spall fracture of 304L stainless steel irradiated by a nanosecond relativistic high-current electron beam. International Journal of Fracture 199, 59–70.Google Scholar
Griffith, AA (1921) The phenomena of rupture and flow in solids. Philosophical Transactions of the Royal Society of London 221, 163–198.Google Scholar
Johansson, S, Ericson, F and Schweitz, J (1989) Influence of surface coatings on elasticity, residual stresses, and fracture properties of silicon microelements. Journal of Applied Physics 65(1), 121–128.Google Scholar
Kovivchak, VS, Panova, TV, Krivozubov, OV, Davletkil'deev, NA and Knyazev, EV (2012) Surface damages on single-crystal silicon during irradiation by a powerful ion beam. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques 6(2), 244–247.Google Scholar
Masters, BJ and Gorey, EF (1978) Proton-enhanced diffusion and vacancy migration in silicon. Journal of Applied Physics 49(5), 2717–2724.CrossRefGoogle Scholar
Remnev, GE, Uglov, VV, Shymanski, VI, Pavlova, SK and Kuleshovb, AK (2014) Formation of nanoscale carbon structures in the surface layer of metals under the impact of high intensity ion beam. Applied Surface Science 310, 204–209.Google Scholar
Rice, JR (1968) A path independent integral and the approximate analysis of strain concentration by notches and cracks. Journal of Applied Mechanics 35, 379–386.CrossRefGoogle Scholar
Shen, J, Yu, X, Zhang, YY, Zhong, HW, Zhang, J, Qu, M, Yan, S, Zhang, GL, Zhang, XF and Le, XY (2015) Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams. Nuclear Instruments and Methods in Physics Research Section B 365, 26–29.Google Scholar
Shen, J, Shahid, I, Yu, X, Zhang, J, Zhong, HW, Cui, XJ, Liang, GY, Yu, X, Huang, WY, Yan, S, Zhang, GL, Zhang, XF and Le, XY (2017) Fracture analysis of surface exfoliation on single crystal silicon irradiated by intense pulsed ion beam. Nuclear Instruments and Methods in Physics Research B 413, 6–12.Google Scholar
Shorlin, KA, Bruyn, JR, Graham, M and Morris, SW (2000) Development and geometry of isotropic and directional shrinkage-crack patterns. Physical Review E 61(6), 6950–6957.Google Scholar
Sundararajan, S and Bhushan, B (2002) Development of AFM-based techniques to measure mechanical properties of nanoscale structures. Sensors and Actuators, A: Physical 101, 338–351.Google Scholar
Tanaka, M, Higashida, K, Nakashima, H, Takagi, H and Fujiwara, M (2006) Orientation dependence of fracture toughness measured by indentation methods and its relation to surface energy in single crystal silicon. International Journal of Fracture 139, 383–394.CrossRefGoogle Scholar
Uglov, VV, Anishchik, VM, Astashynski, VV, Astashynski, VM, Ananin, SI, Askerko, VV, Kostyukevich, EA, Kuz'mitski, AM, Kvasov, NT and Danilyuk, AL (2002) The effect of dense compression plasma flow on silicon surface morphology. Surface and Coatings Technology 158–159, 273–276.CrossRefGoogle Scholar
Uglov, VV, Remnev, GE, Kuleshov, AK, Astashinski, VM and Saltymakov, MS (2010) Formation of hardened layer in WC–TiC–Co alloy by treatment of high intensity pulse ion beam and compression plasma flows. Surface and Coatings Technology 204, 1952–1956.CrossRefGoogle Scholar
Vable, M (2012) Mechanical Properties of Materials. Springer, vol. 190, p. 645.Google Scholar
Vanhellemont, J, Senkader, S, Kissinger, G, Higgs, V, Trauwaert, MA, Gräf, D, Lambert, U and Wagner, P (1997) Measurement, modelling and simulation of defects in as-grown Czochralski silicon. Journal of Crystal Growth 180, 353–362.CrossRefGoogle Scholar
Yu, X, Shen, J, Qu, M, Liu, W, Zhong, HW, Zhang, J, Zhang, YY, Yan, S, Zhang, GL, Zhang, XF and Le, XY (2015) Characterization and analysis of infrared imaging diagnostics for intense pulsed ion and electron beams. Vacuum 113, 36–42.Google Scholar
Zhao, WJ, Remnev, GE, Yan, S, Opekounov, MS, Le, XY, Matvienko, VM, Han, BX, Xue, JM and Wang, YG (2000) Intense pulsed ion beam sources for industrial applications. Review of Scientific Instruments 71(2), 1045–1048.CrossRefGoogle Scholar
Ziegler, JF, Ziegler, MD and Biersack, JP (2010) SRIM – the stopping and range of ions in matter (2010). Nuclear Instruments and Methods in Physics Research Section B 268, 1818–1823.Google Scholar