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Influence of C-implanted ions on the transition properties of VO2 thin films

Published online by Cambridge University Press:  24 February 2020

B. M. Mabakachaba Open the ORCID record for B. M. Mabakachaba [Opens in a new window] ,
I. G. Madiba ,
B.S. Khanyile ,
C.J. Arendse ,
J. Kennedy  and
M. Maaza
B. M. Mabakachaba*
Affiliation:
University of the Western Cape, Department of physics, Robert Sobukwe Rd, Bellville, Cape town 7535, South Africa iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province, South Africa
I. G. Madiba
Affiliation:
UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria, South Africa iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province, South Africa
B.S. Khanyile
Affiliation:
UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria, South Africa iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province, South Africa
C.J. Arendse
Affiliation:
University of the Western Cape, Department of physics, Robert Sobukwe Rd, Bellville, Cape town 7535, South Africa
J. Kennedy
Affiliation:
National Isotope Centre, Advanced Materials & Nanotechnology, GNS Science, 30 Gracefield Road, PO Box 30368, Lower Hutt 5010 New Zealand
M. Maaza
Affiliation:
UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria, South Africa iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province, South Africa
*
*Corresponding Author: B.M Mabakachaba Email:mabakachaba@gmail.com
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Abstract

The study report on Vanadium dioxide thin films of about 100nm thickness deposited using pulsed laser deposition on Si (100). The novel phase change reported is attributed to the post-treatment of the films via ion implantation with 25 KeV C+ ion beam at varying particle fluence (1E15, 1E16, and 1E17 /cm2). At the initial fluence, the preferred phase is retained while amorphization and recrystallization of the film is observed as the fluence increase to 1E16 ions/cm2and 1E17 ions/cm2, respectively. The phase transition of the samples is observed to occur at a temperature below 320 K while stabilization of the low phase structure is observed for the middle fluence. Further increase restores the SMT behaviour/trend that occurred at elevated temperatures.

Keywords

amorphousdopantion-implantationphase transformationthin film
Type
Articles
Information
MRS Advances , Volume 5 , Issue 40-41: Nanoscale and Quantum Materials , 2020 , pp. 2139 - 2146
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Copyright
Copyright © Materials Research Society 2020

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