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An Analysis of Static and Dynamic Characteristics of 12kV 4H-SiC n-IGBT using HfO2-SiO2 Dielectric Stack at High Temperatures

Published online by Cambridge University Press:  03 May 2018

Pavan Vudumula  and
Siva Kotamraju
Pavan Vudumula
Affiliation:
Department of Electronics and Communication Engineering, IIIT Sricity, A.P., INDIA.
Siva Kotamraju*
Affiliation:
Department of Electronics and Communication Engineering, IIIT Sricity, A.P., INDIA.
*
*(Email: siva.k@iiits.in)
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Abstract

In this paper, the variation in device parameters is investigated with respect to temperature by considering the combination of HfO2-SiO2 on 4H-SiC n-IGBT. Two-dimensional numerical simulations using Setaurus TCAD have been performed to analyze the changes in static and dynamic characteristics. The switching waveforms have been analyzed using a clamped inductive circuit with and without HfO2. It seems that the presence of HfO2 in the dielectric stack has a considerable impact on the device turn off time.

Keywords

simulationdielectricdevices
Type
Articles
Information
MRS Advances , Volume 3 , Issue 59: Electronic and Photonic Materials , 2018 , pp. 3433 - 3438
Copyright
Copyright © Materials Research Society 2018 

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