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Charge Trapping Analysis of High Speed Diamond FETs

Published online by Cambridge University Press:  06 February 2017

Pankaj B. Shah ,
James Weil ,
A. Glen Birdwell  and
Tony Ivanov
Pankaj B. Shah*
Affiliation:
Sensors and Electron Devices Directorate, US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA
James Weil
Affiliation:
Sensors and Electron Devices Directorate, US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA
A. Glen Birdwell
Affiliation:
Sensors and Electron Devices Directorate, US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA
Tony Ivanov
Affiliation:
Sensors and Electron Devices Directorate, US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA
*
*(Email: pankaj.b.shah.civ@mail.mil)

Abstract

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Charge carrier trapping in diamond surface conduction field effect transistors (FETs) has been analyzed. For these devices two methods were used to obtain a negative electron affinity diamond surface; either plasma hydrogenation or annealing in an H2 environment. In both cases the Al2O3 gate dielectric can trap both electrons and holes in deep energy levels with emission timescales of seconds, while the diamond – Al2O3 interface traps exhibit much shorter time scales in the microsecond range. Capacitance-Voltage (CV) analysis indicates that these interface traps exhibit acceptor-like characteristics. Correlation with CV based free hole density measurements indicates that the conductance based interface trap analysis provides a method to quantify surface characteristics that lead to surface conduction in hydrogenated diamond where atmospheric adsorbates provide the acceptor states for transfer doping of the surface.

Keywords

defectsdiamondelectronic material
Type
Articles
Information
MRS Advances , Volume 2 , Issue 41: Electronics, Magnetics and Photonics , 2017 , pp. 2235 - 2240
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
Copyright © Materials Research Society 2017

References

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