Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-10T14:54:50.707Z Has data issue: false hasContentIssue false
  • English
  • Français

Co-doping effect on the electronic properties of nonstoichiometric tin telluride

Published online by Cambridge University Press:  03 June 2019

Dana Ben-Ayoun  and
Yaniv Gelbstein
Dana Ben-Ayoun*
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva84105, Israel
Yaniv Gelbstein
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva84105, Israel
*
*Correspondence:danabenayoun@gmail.com
Get access

Abstract

The search for nontoxic compositions in the thermoelectric field has motivated many researches to find alternatives to the toxic Pb-based systems, capable of reaching their high conversion efficiency. SnTe is gaining much attention during the past years due to its superior eco-friendly character, and its very similar crystal and band structure to that of PbTe. These makes SnTe a promising compound with great potential to answer the demand and use as a fair thermoelectric candidate. Most of the recently published studies mainly discuss the stoichiometric SnTe alloy. Only several focus on the effect of introducing excess tin/tellurium to the system. For that reason, this research aims to investigate in detail the nonstoichiometric SnxTe1-x co-doped by bismuth and indium/iodine, in an attempt to optimize the electronic properties.

Keywords

thermoelectricityelectrical properties
Type
Articles
Information
MRS Advances , Volume 4 , Issue 30: Electronics and Photonics , 2019 , pp. 1699 - 1707
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

Sadia, Y., Ohaion-Raz, T., Ben-Yehuda, O., Korngold, M., and Gelbstein, Y., J. Solid State Chem. 241, 79 (2016).CrossRefGoogle Scholar
Gelbstein, Y., J. Appl. Phys. 023713, 1 (2009).Google Scholar
Tan, G., Zhao, L.D., Shi, F., Doak, J.W., Lo, S.H., Sun, H., Wolverton, C., Dravid, V.P., Uher, C., and Kanatzidis, M.G., J. Am. Chem. Soc. 136, 7006 (2014).CrossRefGoogle Scholar
Banik, A., Shenoy, U.S., Anand, S., Waghmare, U. V., and Biswas, K., Chem. Mater. 27, 581 (2015).CrossRefGoogle Scholar
Al Rahal Al Orabi, R., Mecholsky, N.A., Hwang, J., Kim, W., Rhyee, J.S., Wee, D., and Fornari, M., Chem. Mater. 28, 376 (2016).CrossRefGoogle Scholar
Kuropatwa, B.A. and Kleinke, H., J. Inorg. Gen. Chem. 638, 2640 (2012).Google Scholar
Zhou, X., Deng, Y., Nan, C., and Lin, Y., J. Alloys Compd. 352, 328 (2003).CrossRefGoogle Scholar
Zhou, Xisong, Nan, Jun, Wu, Junbo, and Nan, Ce Wen, in 20th Int. Conf. Thermoelectr. (2001), pp. 109–112.Google Scholar
Ben-Ayoun, D. and Gelbstein, Y., in Thermoelectr. Power Gener., edited by Memon, S. (IntechOpen, London, UK, 2019), pp. 1–10.Google Scholar
Freik, D.M., Mudryi, S.I., Gorichok, I.V., Prokopiv, V.V., Matkivsky, O.M., Arsenjuk, I.O., Krynytsky, О.S., and Bojchyk, V.M., Ukr. J. Phys. 61, 155 (2016).CrossRefGoogle Scholar
Zhou, Z., Yang, J., Jiang, Q., Luo, Y., Zhang, D., Ren, Y., He, X., and Xin, J., J. Mater. Chem. A 4, 13171 (2016).CrossRefGoogle Scholar
Shimazaki, H. and Ozawa, T., Am. Mineral. 63, 1162 (1978).Google Scholar
Shannon, R.D., Acta Crystallogr. A, 751 (1976).CrossRefGoogle Scholar
Gelbstein, Y., in Thermoelectr. Power Gener., edited by Skipidarov, S. and Nikitin, M. (IntechOpen, London, UK, 2016), pp. 287–302.Google Scholar
Gelbstein, Y., Dashevsky, Z., and Dariel, M.P., Phys. B Condens. Matter 363, 196 (2005).CrossRefGoogle Scholar