Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-28T19:00:37.181Z Has data issue: false hasContentIssue false
  • English
  • Français

The coupling between two heterogeneous InAs quantum dot families and its effect into optical properties

Published online by Cambridge University Press:  02 May 2017

Debabrata Das ,
Debiprasad Panda ,
Harshal Rawool ,
Vinayak Chavan  and
Subhananda Chakrabarti
Debabrata Das
Affiliation:
Center for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
Debiprasad Panda
Affiliation:
Center for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
Harshal Rawool
Affiliation:
Center for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
Vinayak Chavan
Affiliation:
Center for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
Subhananda Chakrabarti*
Affiliation:
Center for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
*
*Corresponding author: E-mail: subho@ee.iitb.ac.in

Abstract:

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

In this study, we present the coupling between InAs submonolayer (SML) and stranski krastanov (SK) quantum dots (QDs). Interaction between these two different dot families has been manipulated by changing the capping layer thickness. Significant shift in photoluminescence (PL) peak is observed due to the coupling effect. The dynamics of the carriers in this mixed dot matrix has also been modified, which is evident from the increasing activation energy with increasing thickness of the capping layer. Moreover, an ex situ annealing study at different temperatures has been done to check the thermal stability of the as-grown samples. Annealing at lower temperatures, improves the crystal quality a bit, but higher annealing temperatures accelerate the In-Ga interdiffusion and form smaller dots, which is visible from a blue shift in the PL peak of annealed samples. Also, this thermal process improves the dot size distribution.

Keywords

molecular beam epitaxy (MBE)III-Vluminescence
Type
Articles
Information
MRS Advances , Volume 2 , Issue 43: Electronic Devices and Materials , 2017 , pp. 2337 - 2341
Copyright
Copyright © Materials Research Society 2017 

References

References:

Andrews, D. L., Nanophotonic structures and materials, volume 2, (Wiley, New Jersey 2015) pp. 169–175.Google Scholar
Shetty, S., Adhikary, S., Tongbram, B., Ahmad, A., Ghadi, H. and Chakrabarti, S., J. Lumin. 158, 231 (2015).Google Scholar
Panda, D., Balgarkashi, A., Shetty, S., Ghadi, H., Tongbram, B. and Chakrabarti, S., Mater. Sci. Semicond. Process. 60, 40 (2017).CrossRefGoogle Scholar
Basu, N., Ghosh, K., Kabi, S., Sengupta, S. and Chakrabarti, S., Superlattices Microstruct. 57, 150 (2013).Google Scholar
Switaiski, T., Woggon, U., Angeles, D. E. A., Hoffmann, A., Schulze, J. H., Germann, T. D. and Pohl, U. W., Phys. Rev. B: Condens. Matter, 88 (3), 035314 (2013).Google Scholar