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Effects of nitrogen impurity on zno crystal growth on Si substrates

Published online by Cambridge University Press:  16 January 2019

Soichiro Muraoka
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Lyu Jiahao
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Daisuke Yamashita
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Kunihiro Kamataki
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Kazunori Koga
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Masaharu Shiratani
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Naho Itagaki*
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
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Abstract

Effects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

Type
Articles
Copyright
Copyright © Materials Research Society 2019 

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