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Electrical Characterization of Silicon - Nickel Iron Oxide Heterojunctions

Published online by Cambridge University Press:  19 July 2019

James N. Talbert ,
Samuel R. Cantrell ,
Md. Abdul Ahad Talukder ,
Luisa M. Scolfaro  and
Wilhelmus J. Geerts
James N. Talbert
Affiliation:
Department of Physics, Texas State University, 78666San Marcos, Texas, United States
Samuel R. Cantrell
Affiliation:
Department of Physics, Texas State University, 78666San Marcos, Texas, United States
Md. Abdul Ahad Talukder
Affiliation:
Materials Science Engineering and Research Commercialization, Department of Physics, Texas State University, 78666San Marcos, Texas, United States.
Luisa M. Scolfaro
Affiliation:
Department of Physics, Texas State University, 78666San Marcos, Texas, United States
Wilhelmus J. Geerts*
Affiliation:
Department of Physics, Texas State University, 78666San Marcos, Texas, United States
*
*(Email: wjgeerts@txstate.edu)
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Abstract

The electrical properties of Radio Frequency Sputtered NiFeO and NiO films deposited on n and p-type Silicon is investigated for two different oxygen flows. Rectifying properties for Ni0.8Fe0.2O1+ α on n-Si showed Iforward/Ireverse >10,000 for α>0 and Iforward/Ireverse >50 for α<0. Both types of devices have opposite forward biases. Results suggest that NiFeO sputtered at high oxygen flow is p-type. For NiO and NiFeO on p-Si no strong rectifying properties were observed. The specific contact resistivity of Pt/Ni0.9Fe0.1O1+ α (α>0) was estimated from the difference between the two and four-point probe resistances (0.0007 ± 0.0003 Ω cm2). Using density functional theory calculations, density of state and charge density plots were obtained for systems modelled after experiment, showing that states introduced by O vacancies in NiFeO are localized and prefer locations near Ni explaining the observed hysteresis effects in the IV curves of devices sputtered at low oxygen flow.

Keywords

electrical propertiesheterostructureoxidephysical vapor deposition (PVD)Ni
Type
Articles
Information
MRS Advances , Volume 4 , Issue 41-42: Electronics and Photonics , 2019 , pp. 2241 - 2248
Copyright
Copyright © Materials Research Society 2019 

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