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Etchability Dependence of InOx and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

Published online by Cambridge University Press:  30 January 2018

Ana Amaral ,
G. Lavareda ,
C. Nunes de Carvalho ,
V. André ,
Yuri Vygranenko ,
M. Fernandes  and
Pedro Brogueira
Ana Amaral*
Affiliation:
Departamento de Física, Instituto Superior Técnico, Universidade de Lisboa, Portugal. Centro de Física e Engenharia de Materiais Avançados (CeFEMA), Instituto Superior Técnico, Universidade de Lisboa, Portugal.
G. Lavareda
Affiliation:
Departamento de Ciências de Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Portugal. Centro de Tecnologia e Sistemas, Faculdade de Ciências e Tecnologia (CTS), Universidade Nova de Lisboa, Portugal.
C. Nunes de Carvalho
Affiliation:
Centro de Física e Engenharia de Materiais Avançados (CeFEMA), Instituto Superior Técnico, Universidade de Lisboa, Portugal. Departamento de Ciências de Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Portugal.
V. André
Affiliation:
Centro de Química Estrutural (CQE), Instituto Superior Técnico, Universidade de Lisboa, Portugal.
Yuri Vygranenko
Affiliation:
Centro de Tecnologia e Sistemas, Faculdade de Ciências e Tecnologia (CTS), Universidade Nova de Lisboa, Portugal.
M. Fernandes
Affiliation:
Centro de Tecnologia e Sistemas, Faculdade de Ciências e Tecnologia (CTS), Universidade Nova de Lisboa, Portugal. Departamento de Engenharia Electrotécnica e de Computadores, Instituto Superior de Engenharia de Lisboa, Instituto Politécnico de Lisboa, Portugal.
Pedro Brogueira
Affiliation:
Departamento de Física, Instituto Superior Técnico, Universidade de Lisboa, Portugal. Centro de Física e Engenharia de Materiais Avançados (CeFEMA), Instituto Superior Técnico, Universidade de Lisboa, Portugal.
*
*Phone: +351 218419279; e-mail: ana.de.amaral@tecnico.ulisboa.pt
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Abstract

Indium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Bé) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented.

Keywords

transparent conductorthin filmplasma deposition
Type
Articles
Information
MRS Advances , Volume 3 , Issue 4: Nanomaterials , 2018 , pp. 207 - 212
Copyright
Copyright © Materials Research Society 2018 

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References

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