Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-28T15:59:26.457Z Has data issue: false hasContentIssue false
  • English
  • Français

Focused Ion Beam Fabrication of SU-8 Waveguide Structures on Oxidized Silicon

Published online by Cambridge University Press:  23 January 2017

Swagata Samanta ,
Pallab Banerji  and
Pranabendu Ganguly
Swagata Samanta*
Affiliation:
Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, West Bengal, Kharagpur 721302 , India.
Pallab Banerji
Affiliation:
Materials Science Centre, Indian Institute of Technology Kharagpur, West Bengal, Kharagpur 721302, India.
Pranabendu Ganguly
Affiliation:
Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, West Bengal, Kharagpur 721302 , India.
*
*(Email: swagata@atdc.iitkgp.ernet.in)

Abstract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

This work deals with SU-8 waveguides and waveguide structures fabricated on an oxidized silicon substrate using ‘Focused ion beam (FIB) lithography’. From our experimentation it seems that FIB method is practically not suitable for fabricating long SU-8 waveguide structures, rather it is more suitable for nanoscale modification of already fabricated waveguides, such as, to fabricate photonic crystal structures.

Keywords

polymerion-beam processingnanostructure
Type
Articles
Information
MRS Advances , Volume 2 , Issue 18: Processing and Manufacturing , 2017 , pp. 981 - 986
Copyright
Copyright © Materials Research Society 2017 

References

REFERENCES

Lawes, R., Applied Surface Science 36 (1-4), 485–489 (1989).Google Scholar
Demami, F., Pichon, L., Rogel, R. and Salaün, A., IOP Conference Series: Materials Science and Engineering 6 (2009).Google Scholar
Lin, C., Lee, G., Chang, B. and Chang, G., J. Micromechanics and Microengineering 12 (5), 590–597 (2002).Google Scholar
Bilenberga, B., Jacobsena, S., Schmidta, M. S., Skjoldinga, L. H. D., Shib, P., Boggilda, P., Tegenfeldtc, J. O. and Kristensena, A., Microelectronic Engineering 83 (4-9), 1609–1612 (2006).Google Scholar
Nallani, A. K., Park, S. W. and Lee, J. B., Proc. SPIE, 5116 (2003).Google Scholar
Gamo, K., Nuclear Instruments and Methods in Physics Research B65, 40–49 (1992).Google Scholar
Acikgoz, C., Hempenius, M. A., Huskens, J. and Vancso, G. J., J. European Polymer 47 (11), 2033–2052 (2011).Google Scholar
Samanta, S., Dey, P. K., Banerji, P. and Ganguly, P., Optics Commun. 382 (2016).Google Scholar
Lee, J., Choi, K., and Yoo, K., Micromachines 6 (1), 1–18 (2014).CrossRefGoogle Scholar
Yang, B., Yang, L., Hu, R., Sheng, Z., Dai, D., Liu, Q. and He, S., J. Lightwv. Technol. 27 (18), 4091–4096 (2009).Google Scholar
Nordstrom, M., Zauner, D., Boisen, A. and Hubner, J. J. Lightwv. Technol. 25 (5), 1284–1289 (2007).Google Scholar
Dey, P. K. and Ganguly, P., J. Optics 43 (1), 73–79 (2013).Google Scholar