Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-13T01:32:22.522Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results

Published online by Cambridge University Press:  20 June 2016

Takumi Moriyama ,
Takahiro Yamasaki ,
Takahisa Ohno ,
Satoru Kishida  and
Kentaro Kinoshita
Takumi Moriyama*
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Integrated Frontier Research Center, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Takahiro Yamasaki
Affiliation:
Natonal Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
Takahisa Ohno
Affiliation:
Natonal Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan.
Satoru Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Integrated Frontier Research Center, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Kentaro Kinoshita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Integrated Frontier Research Center, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
*
*(Email: b08t3067@faraday.ele.tottori-u.ac.jp)
Get access

Abstract

For practical use of Resistive Random Access Memory (ReRAM), understanding resistive switching mechanism in transition metal oxides (TMO) is important. Some papers predict its mechanism by using first principles calculation; for example, TMO become conductive by introducing oxygen vacancy in bulk single crystalline TMO. However, most of ReRAM samples have polycrystalline structures. In this paper, we introduced a periodic slab model to depict grain boundary and calculated the surface energy and density of states for surfaces of NiO with various orientations using first-principles calculation to consider the effect of grain boundaries for resistive switching mechanisms of ReRAM. As a results, vacancies can be formed on the side surface of grain more easily than in grain. Moreover, we showed that surface conductivity depends on surface orientation of NiO and the orientation of side surface of grain can change easily by introduction of vacancies, which is the switching mechanism of NiO-ReRAM

Keywords

grain boundariesoxidememory
Type
Articles
Information
MRS Advances , Volume 1 , Issue 49: Electronics and Photonics , 2016 , pp. 3367 - 3372
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Gibbons, J. F. and Beadle, W. E., Solid-State Electronics 1964, 7, 785–797.Google Scholar
Choi, B. J., Jeong, D. S. and Kim, S. K., Journal of Applied Physics 2005, 98, 033715.CrossRefGoogle Scholar
Lee, H. Y., Chen, Y. S., Chen, P. S., Gu, P. Y., Hsu, Y. Y., Wang, S. M., Liu, W. H., Tsai, C. H., Sheu, S. S., Chiang, P. C., Lin, W. P., Lin, C. H., Chen, W. S., Chen, F. T., Lien, C. H., Tsai, M. J., Tech. Dig. Int. Electron Devices Meeting 2010, 436–439.Google Scholar
Wei, Z., Takagi, T., Kanzawa, Y., Katoh, Y., Ninomiya, T., Kawai, K., Muraoka, S., Mitani, S., Katayama, K., Fujii, S., Miyanaga, R., Kawashima, Y., Mikawa, T., Shimakawa, K. and Aono, K., IEDM Tech. Dig. 2011, p. 31.4.1.Google Scholar
Lee, H. D., Magyari-Kope, B. and Nishi, Y., Phys. Rev. B 81, 193202 (2010).CrossRefGoogle Scholar
https://azuma.nims.go.jp/ Google Scholar
Perdew, J. P., Burke, K. and Ernzerhof, M., Phys. Rev. Lett. 77, 3865 (1996).Google Scholar
Noguchi, Y., Uchino, M., Hikosaka, H., Atou, T., Kusaba, K., Fukuoka, K., Mashimo, T. and Syono, Y., J. Phys. Chem. Solids 60, 509 (1999).Google Scholar
Rohrbach, A., Hafner, J. and Kresse, G., Phys. Rev. B 69, 075413 (2004).CrossRefGoogle Scholar
Sawatzky, G. A. and Allen, J. W., Phys. Rev. Lett. 53, 2339 (1984).Google Scholar