Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-28T07:37:46.840Z Has data issue: false hasContentIssue false
  • English
  • Français

GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

Published online by Cambridge University Press:  22 May 2017

Pawan Tyagi
Pawan Tyagi*
Affiliation:
Department of Mechanical Engineering, University of the District of Columbia, Washington DC-20008 Deparment of Materials and Metallurgical Engineering, Indian Institute of Technology Kanpur, UP-208016, India
*
*(Email: ptyagi@udc.edu)
Get access

Abstract

Interaction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.

Keywords

passivationRutherford backscattering (RBS)self-assembly
Type
Articles
Information
MRS Advances , Volume 2 , Issue 51: Electronic Devices and Materials , 2017 , pp. 2915 - 2920
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Adachi, S., J. App. Phys. 58, R1 (1985).CrossRefGoogle Scholar
Gammon, D., Snow, E., Shanabrook, B., Katzer, D. and Park, D., Phys. Rev. Lett. 76, 3005 (1996).Google Scholar
Cohen, R., Kronik, L., Shanzer, A., Cahen, D., Liu, A., Rosenwaks, Y., Lorenz, J. and Ellis, A., J. Am. Chem. Soc. 121, 10545 (1999).CrossRefGoogle Scholar
Heath, J.R., Annual Review of Materials Research 39, 1 (2009).Google Scholar
Lu, H.-H., Liu, L., Xu, J.-P., Lai, P.-T. and Tang, W.-M., IEEE Trans. Elec. Dev. 64, 1535 (2017).CrossRefGoogle Scholar
Einspruch, N.G. and Wisseman, W.R.: GaAs Microelectronics: VLSI Electronics Microstructure Science, (Academic Press, Orlando, San Diego, New York, London, Toronto, Montreal, Sydney, Tokyo, 2014).Google Scholar
Jiang, S., He, G., Liang, S., Zhu, L., Li, W., Zheng, C., Lv, J. and Liu, M., J. Alloy. Compd. 704, 322 (2017).Google Scholar
Dong, Y., Ding, X., Hou, X., Li, Y. and Li, X., Appl. Phys. Lett. 77, 3839 (2000).CrossRefGoogle Scholar
Hou, X., Cai, W., He, Z., Hao, P., Li, Z., Ding, X. and Wang, X., Appl. Phys. Lett. 60, 2252 (1992).CrossRefGoogle Scholar
Hasegawa, H., Saitoh, T., Konishi, S., Ishii, H. and Ohno, H., Jpn. J. Appl. Phys. 2 27, L2177 (1988).CrossRefGoogle Scholar
Bessolov, V.N., Lebedev, M.V. and Zahn, D.R.T., J. Appl. Phys. 82, 2640 (1997).Google Scholar
Frese, K. and Morrison, S.R., Appl. Surf. Sci. 8, 266 (1981).CrossRefGoogle Scholar
Cowans, B., Dardas, Z., Delgass, W., Carpenter, M. and Melloch, M., Appl. Phys. Lett. 54, 365 (1989).Google Scholar
Jin, X., Mao, M., Luo, Y., Dong, G., Chen, P. and Wang, X., Vacuum 41, 1061 (1990).CrossRefGoogle Scholar
Williston, L.R., Bello, I. and Lau, W.M., J. Vac. Sci.Tech. A 10, 1365 (1992).CrossRefGoogle Scholar
Li, Z., Hou, X., Cai, W., Wang, W., Ding, X. and Wang, X., J. Appl.l. Phys. 78, 2764 (1995).Google Scholar
Sawada, T., Hasegawa, H. and Ohno, H., Jpn. J. Appl. Phys. 2 26, L1871 (1987).CrossRefGoogle Scholar